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IRFI1010NIRN/a10avai55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package


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IRFI1010N
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 9.1373A
|RF|101ON
HEXFET® Power MOSFET
International
TOR Rectifier
Advanced Process Technology
Isolated Package D
High Voltage Isolation = 2.5KVRMS s
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
VDSS = 55V
RDS(0n) = 0.0129
ID =49A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well ,
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commerciaI-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V 49
ID @ To = 100°C Continuous Drain Current, Ves @ 10V 35 A
IDM Pulsed Drain Current coco 290
Pro @Tc = 25°C Power Dissipation 58 W
Linear Derating Factor 0.38 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©© 360 mJ
IAR Avalanche CurrentCD 43 A
EAR Repetitive Avalanche Energy(0 5.8 mJ
dv/dt Peak Diode Recovery dv/dt @© 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 1O Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 2.6 0
ROM Junction-to-Ambient - 65 C/W

8/25/97
|RF|101ON International
IEBR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.06 - V/°C Reference to 25°C, ID = 1mA©
RDS(on) Static Drain-to-Source On-Resistance - - 0.012 f2 VGs = 10V, ID = 26A co
Vngh) Gate Threshold Voltage 2.0 - 4.0 V VDs = l/ss, ID = 250pA
git Forward Transconductance 30 - - S VDs = 25V, ID = 43A©
loss Drain-to-Source Leakage Current - - 25 PA VDS = 55V, VGS = 0V
- - 250 VDs = 44V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 130 ID = 43A
Qgs Gate-to-Source Charge - - 23 nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - - 53 VGS = 10V, See Fig. 6 and 13 C4)6D
td(on) Turn-On Delay Time - 11 - VDD = 28V
tr Rise Time - 66 - ns ID = 43A
tam) Turn-Off Delay Time - 40 - R9 = 3.69
tr Fall Time - 46 - RD = 0.629, See Fig. 10 @©
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) E )
Ls Internal Source Inductance -- 7 5 - from package G
. and center of die contact s
Ciss Input Capacitance - 2900 - VGs = 0V
Coss Output Capacitance - 880 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 330 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 49 showing the HM
ISM Pulsed Source Current A integral reverse G Elk
(Body Diode) COO) - - 290 p-n junction diode. s
l/so Diode Forward Voltage - - 1.3 V To = 25°C, Is = 26A, VGs = 0V ©
trr Reverse Recovery Time - 81 120 ns T J = 25°C, IF = 43A
er Reverse RecoveryCharge - 240 370 nC di/dt = 100A/ps COO)
Notes:
C) Repetitive rating; pulse width limited by G) Pulse width I 300ps; duty cycle 3 2%.
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 390pH s t=60s, f=60Hz
Re: 250, IAS-- 43A. (See Figure 12)
© '30 f 43A, di/dt g 260A/ps, VDD g V(BR)DSS: © Uses 1RF1010N data and test conditions
T J 3 175°C

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