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IRFH7928TRPBFIRN/a1000avai30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package


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IRFH7928TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
a:io:RIectifier
Applications
. Synchronous MOSFET for Notebook
Processor Power
. Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
Benefits
q Very low RDS(ON) at 4.5V l/ss
PD -96209
Preliminary
IRFH7928 DbF
HEXFET6 Power MOSFET
RDS(on) max tag
2.9mQ@VGS = 10V 40nC
. Low Gate Charge D 5 .
. Fully Characterized Avalanche Voltage and D s . ,5:
Current D EH ' 1
o 100% Tested for Re
0 Lead-Free (Qualified up to 26ty'C Reflow) D 8
o RoHS compliant (Halogen Free)
. Low Thermal Resistance PQFN
0 Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-to-Source Voltage 30 V
Vas Gate-to-Source Voltage t 20
ID @ T, = 25°C Continuous Drain Current, Vss © 10V 26
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 21
ID @ Tc = 25°C Continuous Drain Current, Vas @ 10V 124 A
IDM Pulsed Drain Current OD 208
PD @TA = 25°C Power Dissipation © 3.1
PD OT, = 70°C Power Dissipation s 2.0 W
Linear Derating Factor s 0.025 W/°C
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case © - 1.8
RNA Junction-to-Ambient G) - 40 C/W
ORDERING INFOFIMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes (D through s are on page 10
1
12/19/08

IRFH7928PbF International
PRELIMINARY TOR Rectifier
Static © T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.02 - VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 2.4 2.9 l/ss = 10V, ID = 26A OD
-- 3.0 3.8 mf2 Vss = 4.5V, ID = 21A ©
VGS(th) Gate Threshold Voltage . . 1.35 1.8 2.35 V Vos = l/ss, ID = 100PA
AVGsuh) Gate Threshold Voltage Coefficient - -6.4 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 Vos = 24V, l/ss = 0V
- - 150 pA Vos = 24V, l/ss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 Vas = 20V
Gate-to-Source Reverse Leakage - - -100 nA Vas = -20V
gfs Forward Transconductance 110 - - S Vos = 15V, ID = 21A
th Total Gate Charge - 40 60
Qgs1 Pre-Vth Gate-to-Source Charge - 10.2 - VDS = 15V
0952 Post-Vth Gate-to-Source Charge - 4.7 - l/ss = 4.5V
di Gate-to-Drain Charge -- 13.5 -- nC ID = 21A
ngdr Gate Charge Overdrive -- 11.8 -- See Fig.17 & 18
st Switch Charge (0952 + di) -- 18.2 --
Qoss Output Charge - 22.5 - nC Vos = 16V, Vss = OV
Re Gate Resistance - 0.57 0.7 Q
td(on) Turn-On Delay Time - 22.2 - Vor, = 15V, I/ss = 4.5V
t, Rise Time - 31.5 - ID = 21A
tdwm Turn-Off Delay Time - 22.3 - ns RG=1.8Q
t, Fall Time - 14.2 - See Fig.15
Ciss Input Capacitance - 5657 - Vas = 0V
Cass Output Capacitance - 1005 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 520 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy (2) _ 168 mJ
|AR Avalanche Current LO - 21 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 3 9 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 208 integral reverse G
(Body Diode) CO p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, IS = 21 A, Vas = 0V ©
tn Reverse Recovery Time - 26 40 ns TJ = 25°C, IF = 21A, VDD = 15V
2, Reverse Recovery Charge - 31 47 n0 di/dt = 200A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2

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