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IRFH5301TRPBFIRN/a8000avai30V Single N-Channel HEXFET Power MOSFET in a PQFN 5X6mm package


IRFH5301TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a PQFN 5X6mm packageFeaturesLow RDSon (<1.85mΩ) Lower Conduction LossesLow Thermal Resistance to PCB (<1.1°C/W) Increas ..
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IRFH5301TRPBF
30V Single N-Channel HEXFET Power MOSFET in a PQFN 5X6mm package
International
TGR. Rectifier
(IiuiiliIWtylNl4ji
HEXFET© Power MOSFET
Vos 30 V
RDS(on) max
(@Ves = 10V) 1.85 mn
A (typical) 37 nC
Rs (typical) 1 .5 Q
1 00 © A
(@Tc(Bottom) = 25°C)
PQFN 5X6 mm
Applications
q OR-ing MOSFET for 12V (typical) Bus in-Rush Current
. Synchronous MOSFET for Buck Converters
. Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Low RDSon (<1.85m£2)
Low Thermal Resistance to PCB (<1.1°CNV)
100% Rg tested
Low Profile (<0.9 mm)
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Orderable part number Package Type Form Quantity Note
IRFI-15301TRPbF PCFN 5mm x 6mm Tape and Reel 4000
lf2FH5301Tf2f2bF PQFNémmaeemm Ttape-and-Heel 499 EOL notice # 259
Absolute Maximum Ratings
Parameter Max. Units
I/os Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID © T, = 25°C Continuous Drain Current, Vas @ 10V 35
ID © T, = 70°C Continuous Drain Current, Vss © 10V 28
ID @ TqBomm = 25°C Continuous Drain Current, Vss © 10V 100© A
ID @ TqBonm = 100°C Continuous Drain Current, Vss @ 10V 100©
IDM Pulsed Drain Current C) 400
PD ©T, = 25°C Power Dissipation s 3.6 W
PD @Tcoottorn) = 25°C Power Dissipation s 110
Linear Derating Factor S 0.029 W/°C
TJ Operating Junction and -55 to + 150 I
TSTG Storage Temperature Range
Notes co through © are on page 8
il © 2013 International Rectifier

Submit Datasheet Feedback
December16, 2013
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Static © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 -- -- V Vss = 0V, ID = 250PA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient -- 0.02 -- V/°C Reference to 25°C, ID = 1mA
RDSW) Static Drain-to-Source On-Resistance - 1.55 1.85 mg Vss = 10V, ID = 50A ©
- 2.4 2.9 Vss = 4.5V, ID = 50A ©
Vssitm Gate Threshold Voltage 1.35 1.80 2.35 V Vos = Vss, ID = 100pA
AVGSah) Gate Threshold Voltage Coefficient - -6.9 - mV/°C
loss Drain-to-Source Leakage Current - - 5.0 pA 1/ros = 24V, Vas = 0V
- - 150 Vros = 24V, Vas = 0V, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -1OO VGS = -20V
gfs Forward Transconductance 218 - - S Vos = 15V, ID = 50A
q, Total Gate Charge -- 77 -- nC Vss = 10V, VDs = 15V, ID = 50A
q, Total Gate Charge -- 37 56
As, Pre-Vth Gate-to-Source Charge -- 9.8 -- Vos = 15V
0952 Post-Vth Gate-to-Source Charge --.- 5 - Ves = 4.5V
di Gate-to-Drain Charge - 12 - nC ID = 50A
090d, Gate Charge Overdrive - 10 - See Fig.6,17 & 18
thw Switch Charge (0952 + di) - 17 -
Qcss Output Charge - 22 - nC 1/ros = 16V, Vas = 0V
Re Gate Resistance - 1.5 2.3 Q
tdmn) Turn-On Delay Time - 21 - VDD = 15V, Vas = 4.5V
t, Rise Time - 78 - ns ID = 15A
ton Turn-Off Delay Time - 22 - RG=1.OQ
t, Fall Time - 23 - See Fig.15
Ciss Input Capacitance -- 5114 -- Vss = 0V
Cass Output Capacitance - 1017 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 406 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 150 mJ
|AR Avalanche Current co _ 50 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 100 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - _ 400 integral reverse G
(Body Diode) CD p-n junction diode. S
l/sro Diode Forward Voltage - - 1.0 V To = 25°C, IS = 50A, Vss = 0V ©
t,, Reverse Recovery Time - 24 36 ns To = 25°C, IF = 50A, VDD = 15V
Qrr Reverse Recovery Charge - 53 80 n0 di/dt = 300A/ps ©
ton Forward Turn-On Time Time is dominated by parasitic Inductance
Thermal Resistance

Parameter Typ. Max. Units
Rm (Bottom) Junction-to-Case © - 1.1
FU:: (Top) Junction-to-Case © _ 15 oC/W
Fu, Junction-to-Ambient s _ 35
Ram (<1OS) Junction-to-Ambient © _ 22
© 2013 International Rectifier Submit Datasheet Feedback December 16, 2013
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