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IRFH5025TR2PBFIRN/a210avai250V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package


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IRFH5025TR2PBF
250V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
TOR Rectifier mAlfIjfieNAlii
HEXFET© Power MOSFET
Vns 250 V
RDS(on) max 100 m9
(@VGS = 10V)
09 (typical) 37 nC
Re (typical) 1.6
In ' _
(@Tc(Bonom) = 25°C) PQFN 5X6 mm
Applications
. Secondary Side Synchronous Rectification
o Inverters for DC Motors
. DC-DC Brick Applications
. Boost Converters
Features and Benefits
Features Benefits
Low RDSon Lower Conduction Losses
Low Thermal Resistance to PCB (s O.8°C/W) Enable better thermal dissipation
100% Rg tested Increased Reliability
Low Profile (s 0.9 mm) results in Increased Power Density
Industry-Standard Pinout => Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
Orderable part number Package Type Standard Pack . Note
Form Quantity
IRFH5025TPPBF PQFN 5rrm x6mm Tape and Reel 4000
IHFH5026m2PBF P(2FN-grmrx6mq IapeaneLReel 400 EOL notice # 259
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 250 V
I/ss Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, l/ss © 10V 3.8
b @ TA = 70°C Continuous Drain Current, Vos © 10V 3.1
ID @ Tcmomm) = 25°C Continuous Drain Current, l/ss © 10V 25
b © Tagomm) = 100°C Continuous Drain Current, I/ss @ 10V 16 A
ID @ Temp, = 25°C Continuous Drain Current, Vos © 10V 5.7
ID @ Temp, = 100°C Continuous Drain Current, l/ss © 10V 3.7
bu Pulsed Drain Current (D 46
PD @TA = 25°C Power Dissipation G) 3.6 W
Pr, © TC(Top) = 25°C Power Dissipation CO 8.3
Linear Derating Factor co 0.07 W/°C
T J Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Notes C) through co are on page 8
fl © 2014 International Rectifier Submit Datasheet Feedback May 12, 2014

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Static tii! T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 250 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.31 - VPC Reference to 25°C, ID = 1mA
Rom") Static Drain-to-Source On-Resistance - 84 100 m9 I/ss = 10V, ID = 5.7A (3
VSS(th) Gate Threshold Voltage . . 3.0 - 5.0 V VDs = Vas, ID = 150pA
AVGS(th) Gate Threshold Voltage Coefficient - -13 - mV/°C
loss Drain-to-Source Leakage Current - - 20 pA VDS = 250V, Vss = 0V
- - 250 Vos = 250v, Vas = OV, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 13 - - S Vos = 50V, ID = 5.7A
Q, Total Gate Charge - 37 56
0951 Pre-Vth Gate-to-Source Charge - 8.3 - Vos = 125V
Qgsz Post-Vth Gate-to-Source Charge - 1.9 - nC Vas = 10V
di Gate-to-Drain Charge - 13 - ID = 5.7A
ngd, Gate Charge Overdrive - 14 - See Fig.1 & 18
st Switch Charge (ass! + di) - 15 -
QoSS Output Charge - 11 - nC Vos = 16V, Vss = 0V
Re Gate Resistance - 1.6 - £2
ton) Turn-On Delay Time - 9.0 - Va, = 125V, VGS = 10V
t, Rise Time - 6.3 - ns ID = 5.7A
ton Turn-Off Delay Time - 17 - Rs=1 .89
t, Fall Time - 6.1 - See Fig.15
Ciss Input Capacitance - 2150 - Vss = 0V
cu, Output Capacitance - 150 - pF Vos = 50V
Crss Reverse Transfer Capacitance - 40 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 320 mJ
(u, Avalanche Current C) - 5.7 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 5.7 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 46 integral reverse (5
(Body Diode) C) p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 5.7A, Vss = 0V co
trr Reverse Recovery Time - 55 83 ns Tu = 25°C, IF = 5.7A, Vor) = 125V
0,, Reverse Recovery Charge - 510 770 nC di/dt = 500A/ps ©
ton Forward Turn-On Time Time is dominated by parasitic Inductance
Thermal Resistance
Parameter Typ. Max. Units
Fu, (Bottom) Junction-to-Case 0.5 0.8
Rax, (Top) Junction-to-Case GD - 15 °C/W
Ra,, Junction-to-Ambient s - 35
Ra, (<1OS) Junction-to-Ambient 6) - 22
© 2014 International Rectifier Submit Datasheet Feedback May 12, 2014

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