IRFG9110 ,100V Quad P-Channel MOSFET in a MO-036AB packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFH3702TRPBF , HEXFET Power MOSFET
IRFH5006TRPBF ,60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageFeaturesLow R (≤ 4.1mΩ) Lower Conduction LossesDSon Low Thermal Resistance to PCB (≤ 0.8°C/W) Enabl ..
IRFH5007TRPBF ,75V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageFeatures≤ ΩLow R ( 5.9m ) Lower Conduction LossesDSon Low Thermal Resistance to PCB (≤ 0.8°C/W) Ena ..
IRFH5015TRPBF ,150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageFeaturesLow RDSon (< 31 mΩ) Lower Conduction LossesLow Thermal Resistance to PCB (<0.8°C/W) Increas ..
IRFH5020TRPBF ,200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageFeaturesLow R Lower Conduction LossesDSon Low Thermal Resistance to PCB (≤ 0.8°C/W) Enable better ..
ISL6504CB ,Multiple Linear Power Controller with ACPI Control InterfaceApplicationsDUAL SBregulator uses an external N-channel pass MOSFET to •ACPI-Compliant Power Regula ..
ISL6504CB-T , Multiple Linear Power Controller with ACPI Control Interface
ISL6504CR ,Multiple Linear Power Controller with ACPI Control InterfaceFeaturesACPI Control Interface• Provides four ACPI-Controlled Voltages-5V USB/Keyboard/MouseThe ISL ..
ISL6505CB ,Multiple Linear Power Controller with ACPI Control InterfaceApplicationsATX power supply, for minimal losses. The •ACPI-Compliant Power Regulation for Motherbo ..
ISL6505CR ,Multiple Linear Power Controller with ACPI Control Interfaceapplications. The IC -1.2V Processor VID CircuitryVIDintegrates three linear controllers/regulators ..
ISL6506ACB ,Multiple Linear Power Controller with ACPI Control Interfaceapplications. The IC Regulation in S3/S4/S5• Excellent 3.3VDUALintegrates the control of the 5V an ..
IRFG9110
100V Quad P-Channel MOSFET in a MO-036AB package
Absolute Maximum RatingsPD - 90397G
1
Product SummaryFor footnotes refer to the last page
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Features:Simple Drive RequirementsEase of ParallelingHermetically SealedElectrically IsolatedDynamic dv/dt RatingLight-weight
POWER MOSFET
THRU-HOLE (MO-036AB)
IRFG9110
JANTX2N7335
JANTXV2N7335
REF:MIL-PRF-19500/599
100V, QUAD P-CHANNEL
HEXFET MOSFET TECHNOLOGY
IRFG9110
Thermal Resistance
Source-Drain Diode Ratings and CharacteristicsFor footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Note: Corresponding Spice and Saber models are available on the G&S Website.
3
IRFG9110
Fig 4. Normalized On-ResistanceVs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRFG9110
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 7. Typical Source-Drain DiodeForward Voltage
5
IRFG9110
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time WaveformsVDD
IRFG9110
Fig 12c. Maximum Avalanche EnergyVs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test CircuitIASVDSDD
15V
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform-10V
