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IRFD9120N/a971avai-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package


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IRFD9120
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
PD-9.331l
llttierrtatiiartial ,
l R FD91 20
1912 Rectifier
HEXFET® Power MOSFET
o Dynamic dv/dtRating
It Repetitive Avalanche Rated
0 For Automatic Insertion
0 End Stackable
0 P-Channel
0 175°C Operating Temperature
0 Fast Switching
VDSS =3 ..100V
RDS(on) = 0.609
ID 'iT.". -1.0A
Description
Third Generation" HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter T Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vas @ -10 V -1.0 '
lo © To = 100°C Continuous Drain Current, Vas © -10 v . -o.70 A
IDM Pulsed Drain Current C) Aho
Po © To = 25°C Power Dissipation 1.3 W
Linear Derating Factor 0.0083 W/°C
Vas Gpte-to-Sourtzs Voltage :20 V
EAS Single Pulse Avalanche Energy © 140 ml
IAR Avalanche Current C) -1.0 A
EAR Repetitive Avalanche Energy Ci) 0.13 md
dv/dt Peak Diode Recovery dv/dt © -5.5 V/ns
To Operating Junction and -55 to +175
TSTG Storage Temperature Range ot)
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rm Junction-to-Ambient - - 120 ic/w
TlFD9120 EOR
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -1 00 - - V Vss=0V, ID---250PA
AV(BH)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.10 -...- V/°C Reference to 25°C, ID=-1mA
Rns(on) Static Drain-to-Source On-Hesistance - - 0.60 Q Ves=-1OV, |D=-0.60A CD
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS=VGS, |D=-250p,A
grs Forward Transconductance 0.71 - - S VDs=-50V, ID=-0.60A ©
. - - -100 VDs=-100V, Vas=OV
loss Drain-to-Source Leakage Current - - -500 pA VDs=-80V, Ves=0V, To=15tPC
less Gate-to-Source Forward Leakage - - -100 n A Vas=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=2OV
Qg Total Gate Charge - - 18 b=-6.8A
Qgs Gate-to-Source Charge - - 3.0 nC Vps=-80V
di Gate-to-Drain ("Miller") Charge ...-.... - 9.0 VGs=-10V See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 9.6 - VoD=-5OV
tr Rise Time - 29 - ns lo=-6.8A
tri(oit) Turn-Off Delay Time - 21 - Re=18Q
1. Fall Time - 25 - Rtr--.7.1n See Figure 10 ©
Lo Internal Drain Inductance - 4.0 .--. 2 $113 tte. ') _a,i:iiii-l',:)
nH from package G l
Ls Internal Source Inductance - 6.0 - Ind center df :37;
die contact 3
Ciss Input Capacitance - 390 - Ves=OV
Coss Output Capacitance -... 170 - pF Vos=-25V
Crss Reverse Transfer Capacitance - 45 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - " o MOSFET symbol D
(Body Diode) _ ' A showing the
ISM Pulsed Source Current - - -8.0 integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - -6.3 V TJ=25°C, Is=-1.0A, VGs=0V ©
tn Reverse Recovery Time - 98 200 ns T,r--250C, Iran-tMA
er Reverse Recovery Charge - 0.33 0.66 pC di/dt=100Ahs ©
ton Forward Turn-On Time Intrinsic turn-on time is negleglble (turn-on is dominated by Ls+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-25V, starting TJe25oC, L=52mH
RG=25§2, |As=-2.0A (See Figure 12)
TJS175°C
© lsoS-6.8A, di/dts1 IO/Vps, VooSVuamoss.
© Pulse width 3 300 us; duty cycle s2°/o.
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