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IRFBF20L-IRFBF20S
900V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR, Rectifier
PRELIMINARY
PD - 9.1665
IRFBF20S/L
Description
Third generation HEXFETs from international Rectiferprovide the designerwith the
best combination of fast switching, ruggedized device design, lowon-resistance and
cost-effectivenes
The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection resistance and can
Surface Mount (IRFBF20S)
Low-profile through-hole (IRFBF20L)
Available in Tape & Reel (IRFBF20S)
Dynamic dv/dt Rating
150°C Operating Temperature G
Fast Switching
Fully Avalanche Rated
HEXFET® Power MOSFET
VDSS = 900V
RDS(on) = 8.09
ID=1.7A
dissipate upt02.0Win atypical surface mountapplication. Thethrough-hole version D 2 Pak T0-262
(IRFBF20L) is available forlow-profile applications.
Absolute Maximum Ratings
Parameter Max. Units
b @ Tc = 25°C Continuous Drain Current, VGS @ ION/S 1.7
ID @ Tc = 100°C Continuous Drain Current, Veg @ 10VC9 1.1 A
IDM Pulsed Drain Current C)6) 6.8
Pro @TA= 25°C Power Dissipation 3.1 W
PD @Tc = 25''C Power Dissipation 54 W
Linear Derating Factor 0.43 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©S 180 m]
IAR Avalanche Current0) 1.7 A
EAR Repetitive Avalanche Energy© 5.4 rN
dv/dt Peak Diode Recovery dv/dt ©6) 1.5 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.3 o C /W
ReJA Junction-to-Ambient ( PCB Mounted/steady-state)" - 4O
7/ 1 0/97
IRFBF20S/L
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 900 - - V VGS = 0V, ID = 250pA
AV
RDs(on) Static Drain-to-Source On-Resistance - - 8.0 f2 VGs =10V, ID = 1.0A ©
Vngh) Gate Threshold Voltage 2.0 - 4.0 V VDs = l/ss, ID = 250pA
git Forward Transconductance 0.60 - - S VDs = 50V, ID = 1.0AS
loss Drain-to-Source Leakage Current - - 100 HA VDS = 900V, VGS = 0V
- - 500 VDs = 720V, VGS = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 38 ID = 1.7A
Qgs Gate-to-Source Charge - - 4.7 nC VDs = 360V
di Gate-to-Drain ("Miller") Charge - - 21 VGS = 10V, See Fig. 6 and 13 ©©
tum) Turn-On Delay Time - 8.0 - VDD = 450V
tr RiseTime - 21 - ns ID = 1.7A
tam) Turn-Off Delay Time - 56 - R9 = 189
tr FaIITime - 32 - RD = 2800, See Fig. 10 (4D6)
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 490 - VGs = 0V
Coss Output Capacitance - 55 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 18 - f = 1.0MHz, See Fig. 5S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.7 A showing the [-,
ISM Pulsed Source Current integral reverse G Ex
(Body Diode) C) - - 6.8 p-n junction diode. S
VSD Diode Forward Voltage - - 1.5 V To = 25°C, Is = 1.7A, VGS = 0V co
trr Reverse Recovery Time - 350 530 ns To = 25°C, IF = 1.7A
er Reverse Recovery Charge - 0.85 1.3 pC di/dt = 100A/ps cos
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD =50V,
starting Tu = 25°C, L =117mH
Rs = 259, 'As = 1.7A. (See Figure 11)
© Iso $1.7A,
TJS150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
di/dt S 70A/ps, VDD f V(BR)DSS,
© Pulse width 3 300ps; duty cycle 3 2%.
G) Uses IRFBF20 data and test conditions
For recommended footprint and soldering techniques refer to application note #AN-994.
