IC Phoenix
 
Home ›  II30 > IRFBE30 -IRFBE30.-IRFBE30..-IRFBE30PBF,800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFBE30 -IRFBE30.-IRFBE30..-IRFBE30PBF Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFBE30 |IRFBE30IR N/a800avai800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFBE30. |IRFBE30IRN/a50avai800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFBE30.. |IRFBE30IRN/a100avai800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFBE30PBFIRN/a75avai800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


IRFBE30 ,800V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low thermal resistance and ..
IRFBE30. ,800V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational TOR Rectifier PD-9.613A IRFBEBO HEXFETO Power MOSFET 0 Dynamic dv/dt R ..
IRFBE30.. ,800V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational TOR Rectifier PD-9.613A IRFBEBO HEXFETO Power MOSFET 0 Dynamic dv/dt R ..
IRFBE30L ,800V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD - 94694IRFBE30SIRFBE30L®HEXFET Power MOSFETO Dynamic dv/dt RatingO Repetitive Avalanche RatedDO ..
IRFBE30PBF ,800V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational TOR Rectifier PD-9.613A IRFBEBO HEXFETO Power MOSFET 0 Dynamic dv/dt R ..
IRFBE30S ,800V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 94694IRFBE30SIRFBE30L®HEXFET Power MOSFETO Dynamic dv/dt RatingO Repetitive Avalanche RatedDO ..
ISL6326BCRZ-T , 4-Phase PWM Controller with 8-Bit DAC Code Capable of Precision DCR Differential Current Sensing
ISL6327IRZ , Enhanced 6-Phase PWM Controller with 8-Bit VID Code and Differential Inductor DCR or Resistor Current Sensing
ISL6327IRZ-T , Enhanced 6-Phase PWM Controller with 8-Bit VID Code and Differential Inductor DCR or Resistor Current Sensing
ISL6329 ,Dual PWM Controller Powering AMD SVI Split-Plane Processorsfeatures a multiphase controller to support the Core - 3,4,5 or 6-Phase Operation with External PWM ..
ISL6329CRZ , Dual PWM Controller Powering AMD SVI Split-Plane Processors
ISL6333ACRZ , Three-Phase Buck PWM Controller with Integrated MOSFET Drivers and Light Load Efficiency Enhancements for Intel VR11.1 Applications


IRFBE30 -IRFBE30.-IRFBE30..-IRFBE30PBF
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
ilrtterrtati'onall
Rectifier
PD-9.613A
IFlFBE30
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
o Repetitive Avalanche Rated
0 Fast Switching
0 Ease of Paralleling
It Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
D Voss = 800V
c, RDS(on) = 3.0g
s ID = 4.1A
on-resistance and cost-effectiveness.
The TO.420 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the T0220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
10 @ To = 25°C Continuous Drain Current, Vas © 10 V 4.1
to @ To = 100°C Continuous Drain Current, I/ss @ 10 V 2.6 A
IDM Pulsed Drain Current C) 16
PD © To = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 WPC
Ves Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 260 mJ
IAR Avalanche Current co 4.1 A
EAR Repetitive Avalanche Energy 6) 13 mJ
dv/dt Peak Diode Recovery dv/dt Ca) 2.0 V/ns
To Operating Junction and -55 to +150
Tsrs Storage T emperature Range _ °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbfoin (1.1 Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - -- 1 .O
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
RGJA Junction-to-Ambient - - 62
IRFBESO
Electrical Characteristics @ To LT, 25°C (unless otherwise specified)
Parameter Min. Typ. Max, Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 800 - - V VGs=0V, ID: 250pA
AV(BH)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.90 - V/°C Reference to 25°C, ID: 1mA
Fusion) Static Drain-to-Source On-Resistance - - 3.0 n Vss=10V, tD=2.5A (4C)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 250pA
gfs Forward Transconductance 2.5 - - S Vos=100V, ID=2.5A ©
loss Drain-to-Source Leakage Current - - 100 WA Vos=800V, Vas=0V
- - 500 VDs=64OV, Ves=0V, TJ=125°C
lass Gate-to-Source Forward Leakage - - _ 100 n A Vcs=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
ck Total Gate Charge - - 78 ID=4.1A
Qgs Gate-to-Source Charge - - 9.6 nC Vos=400V
di Gate-to-Drain ("Miller") Charge - - 45 VGs=1OV See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 12 - Voo=4OOV
tr Rise Time - 33 -r-rq.. ns kr=4.1 A
two") Tum-Off Delay Time - 82 - Re=12§2
1: Fall Time - 30 - RD=959 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 3:1 ite, ' D
nH from package ii-i-l-,
Ls Internal Source Inductance - 7.5 - Ind center 0f 5:3
die contact s
Ciss Input Capacitance - 1300 - VGs=0V
Coss Output Capacitance - 310 - pF Vos=25V
Crss Reverse Transfer Capacitance - 190 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 4 1 MOSFET symbol D
(Body Diode) . A showing the F7:
ISM Pulsed Source Current - - 16 integral reverse G trl
(Body Diode) C) p-n junction diode, s
Vso Diode Forward Voltage - --. 1.8 V TJ=250C, Is=4.1A, VGs=0V ©
trr Reverse Recovery Time - 480 720 ns TJ=25°C, |p=4.1A
er Reverse Recovery Charge - 1.8 2.7 110 dildt=100Alps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=50V, starting TJ=25°C, L=29mH
RG=259, IAs=4.1A (See Figure 12)
TJS150°C
© [5034.1A, di/dts100A/ps, VDDSGOO ,
© Pulse width s; 300 vs; duty cycle 32%.-
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED