IRFBC40AS ,600V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 6 ..
IRFBC40L ,600V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications because of its low internal connection resistance and can2 D Pak TO-262dissipate ..
IRFBC40LC ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
litre Rectifier IRFBC40LC
HEXFET® Power MOSFET
. Ultra Low Gate Charge
q Re ..
IRFBC40LCPBF ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.
Absolute Maximum Ratings
TO-220AB
_ _ l Parynerer w l _ yax. / "unit's _
h: ..
IRFBC40PBF ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInterriati
I912
onal
Rectifier
HEXFET® Power MOSFET
. Dynamic dv/dt
. Repetitive Av ..
IRFBC40S ,600V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91016AIRFBC40S/L®HEXFET Power MOSFETl Surface Mount (IRFBC40S)Dl Low-profile through-hole (IRF ..
ISL6323 ,Hybrid SVI/PVI, Monolithic Dual PWM Hybrid Controller Powering AMD SVI Split-Plane and VI Uniplane Processorsfeatures a multiphase controller to support - Conforms to AMD SVI Specificationsuniplane VDD core v ..
ISL6323IRZ , Hybrid SVI/PVI
ISL6326BCRZ-T , 4-Phase PWM Controller with 8-Bit DAC Code Capable of Precision DCR Differential Current Sensing
ISL6327IRZ , Enhanced 6-Phase PWM Controller with 8-Bit VID Code and Differential Inductor DCR or Resistor Current Sensing
ISL6327IRZ-T , Enhanced 6-Phase PWM Controller with 8-Bit VID Code and Differential Inductor DCR or Resistor Current Sensing
ISL6329 ,Dual PWM Controller Powering AMD SVI Split-Plane Processorsfeatures a multiphase controller to support the Core - 3,4,5 or 6-Phase Operation with External PWM ..
IRFBC40AS
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD- 91897A
International
. . SMPS MOSFET |RFBC4OAS
Tart Rectifier
HEXFET® Power MOSFET
Applications
o Switch Mode Power Supply ( SMPS ) Voss Rds(on) max ID
q Uninterruptable Power Supply 600V 1.29 6.2A
0 High speed power switching
Benefits
o Low Gate Charge Qg results in Simple
Drive Requirement
q Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
q Fully Characterized Capacitance and
Avalanche Voltage and Current
0 Effective Coss Specified ( See AN 1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V© 6.2
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V© 3.9 A
IDM Pulsed Drain Current C)6) 25
Po @Tc = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage , 30 V
dv/dt Peak Diode Recovery dv/dt ©© 6.0 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topology:
0 Single transistor Forward
Notes co through s are on page 9
6/29/99
IRFBC40AS
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V VGS = 0V, ID = 250pA
AV(BR)ross/ATo Breakdown Voltage Temp. Coemcient - 0.66 - V/°C Reference to 25°C, ID = 1mA©
RDS(on) Static Drain-to-Source On-Resistance - 1.2 Q VGS = 10V, ID = 3.7A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vros = VGs, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 600V, VGS = 0V
- - 250 Vos = 480V, VGS = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - 100 n A I/cs = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
git Forward Transconductance 3.4 - - S VDs = 50V, ID = 3.7A
% Total Gate Charge - - 42 ID = 6.2A
Qgs Gate-to-Source Charge - - 10 nC Vos = 480V
di Gate-to-Drain ("Miller") Charge - - 20 Was = 10V, See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 13 - I/oo = 300V
tr Rise Time - 23 - ns ID = 6.2A
tam) Turn-Off Delay Time - 31 - Rs = 9.19
tf Fall Time - 18 - Ro = 47Q,See Fig. 10 ©
Ciss Input Capacitance - 1036 - VGs = 0V
Coss Output Capacitance - 136 - I/os = 25V
Crss Reverse Transfer Capacitance - 7.0 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1487 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 36 - VGS = 0V, Vos = 480V, f = 1.0MHz
CDSS eff. Effective Output Capacitance - 48 - VGS = 0V, Vros = 0V to 480V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 570 mJ
IAR Avalanche Current© - 6.2 A
EAR Repetitive Avalanche Energyc0 - 13 mJ
Thermal Resistance
Parameter Typ. Max. Units
Reoc Junction-to-Case - 1.0 °C/W
ReJA Junction-to-Ambient ( PCB Mounted, steady-state)" - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 6.2 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 25 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V TJ = 25°C, Is = 6.2A, l/ss = OV ©
trr Reverse Recovery Time - 431 647 ns TJ = 25°C, IF = 6.2A
Orr Reverse RecoveryCharge - 1.8 2.8 PC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L5+LD)
2
