IRFBC40APBF ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 6 ..
IRFBC40AS ,600V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 6 ..
IRFBC40L ,600V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications because of its low internal connection resistance and can2 D Pak TO-262dissipate ..
IRFBC40LC ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
litre Rectifier IRFBC40LC
HEXFET® Power MOSFET
. Ultra Low Gate Charge
q Re ..
IRFBC40LCPBF ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.
Absolute Maximum Ratings
TO-220AB
_ _ l Parynerer w l _ yax. / "unit's _
h: ..
IRFBC40PBF ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInterriati
I912
onal
Rectifier
HEXFET® Power MOSFET
. Dynamic dv/dt
. Repetitive Av ..
ISL6323 ,Hybrid SVI/PVI, Monolithic Dual PWM Hybrid Controller Powering AMD SVI Split-Plane and VI Uniplane Processorsfeatures a multiphase controller to support - Conforms to AMD SVI Specificationsuniplane VDD core v ..
ISL6323IRZ , Hybrid SVI/PVI
ISL6326BCRZ-T , 4-Phase PWM Controller with 8-Bit DAC Code Capable of Precision DCR Differential Current Sensing
ISL6327IRZ , Enhanced 6-Phase PWM Controller with 8-Bit VID Code and Differential Inductor DCR or Resistor Current Sensing
ISL6327IRZ-T , Enhanced 6-Phase PWM Controller with 8-Bit VID Code and Differential Inductor DCR or Resistor Current Sensing
ISL6329 ,Dual PWM Controller Powering AMD SVI Split-Plane Processorsfeatures a multiphase controller to support the Core - 3,4,5 or 6-Phase Operation with External PWM ..
IRFBC40A-IRFBC40APBF
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Tait, Rectifier
Applications
SMPS MOSFET
PD -91885A
IRFBC40A
HEXFET© Power MOSFET
q Switch Mode Power Supply ( SMPS ) Voss Rds(on) max ID
o Uninterruptable Power Supply 600V 1.252 6.2A
q High speed power switching
Benefits
q Low Gate Charge 09 results in Simple
Drive Requirement
q Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
0 Fully Characterized Capacitance and
Avalanche Voltage and Current TO-220AB G D S
o Effective Coss Specified ( See AN 1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 6.2
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 3.9 A
IDM Pulsed Drain Current © 25
Pro @TC = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 Wl°C
VGS Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 6.0 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10lbf-in (1.1N-m)
Typical SMPS Topologies:
0 Single Transistor Forward
Notes co through s are on page 8
1
6/24/99
IRFBC40A International
Static @ T J = 25°C (unless otherwise specified) IOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V VGS = 0V, ID = 250PA
AV
Rosom Static Drain-to-Source On-Resistance - - 1.2 Q VGs = 10V, ID = 3.7A ©
VGSW Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
. - - 25 Vos = 600V, VGS = 0V
loss Drain to-Source Leakage Current - _ 250 p Ws = 480V, VGS = 0V, Tu = 125°C
I Gate-to-Source Forward Leakage - - 100 n A l/ss = 30V
GSS Gate-to-Source Reverse Leakage - - -100 l/ss = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
git Forward Transconductance 3.4 - - S Ws = 50V, ID = 3.7A
% Total Gate Charge - - 42 In = 6.2A
Qgs Gate-to-Source Charge - - 10 n0 VDs = 480V
di Gate-to-Drain ("Miller") Charge - - 20 V95 = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 13 - VDD = 300V
t, Rise Time - 23 - ns ID = 6.2A
td(off) Turn-Off Delay Time - 31 - Rs = 9.19
tf Fall Time - 18 - RD = 47f2,See Fig. 10 ©
Ciss Input Capacitance - 1036 - I/ss = OV
Coss Output Capacitance - 136 - Vos = 25V
Crss Reverse Transfer Capacitance - 7.0 - pF f = 1.0MHz, See Fig. 5
Cos, Output Capacitance - 1487 - Ves = 0V, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 36 - VGS = 0V, Vros = 480V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 48 - Ves = 0V, Vos = 0V to 480V S
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 570 mJ
IAR Avalanche Current© - 6.2 A
EAR Repetitive Avalanche Energy(0 - 13 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 1.0
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient 62
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 6 2 MOSFET symbol D
(Body Diode) - - . A showing the
ISM Pulsed Source Current 25 integral reverse G
(Body Diode) co - - p-n junction diode. s
I/sro Diode Forward Voltage - - 1.5 V To = 25°C, ls = 6.2A, VGS = 0V ©
tn Reverse Recovery Time - 431 647 ns To = 25°C, IF = 6.2A
Qrr Reverse RecoveryCharge - 1.8 2.8 PC di/dt = 100/Vps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by Ls+LD)
2
