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IRFBC30LIRN/a1508avai600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRFBC30SIRN/a4800avai600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


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IRFBC30L-IRFBC30S
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD-9.1015
International
TOR, Rectifier PRELIMINARY IRF BC3OS/L
HEXFET® Power MOSFET
Surface Mount (IRFBC30S) D
Low-profile through-hole (IRFBC30L) VDss = 600V
Available in Tape & Reel (IRFBC30S)
Dynamic dv/dt Rating RDS(on) = 229
150°C Operating Temperature G
Fast Switching ID = 3.6A
Fully Avalanche Rated s
Description
Third generation HEXFETs from international Rectifier provide the designerwith the
best combination of fast switching, ruggedized device design, lowon-resistance and
cost-effectiveness.
The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection resistance and can
dissipate upt02.0Win atypical surface mountapplication. Thethrough-hole version D 2 Pak T0-262
(IRFBC30L) is availablefor low-profile applications.
Absolute Maximum Ratings
Parameter Max. Units
b @ TC = 25°C Continuous Drain Current, VGS @ ION/S 3.6
ID @ Tc = 100°C Continuous Drain Current, Veg @ 10VC9 2.3 A
IDM Pulsed Drain Current C)6) 14
Pro @TA= 25°C Power Dissipation 3.1 W
PD @Tc = 25''C Power Dissipation 74 W
Linear Derating Factor 0.59 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©S 290 m]
IAR Avalanche Current0) 3.6 A
EAR Repetitive Avalanche Energy© 7.4 rN
dv/dt Peak Diode Recovery dv/dt ©6) 3.0 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.7 o C /W
ReJA Junction-to-Ambient ( PCB Mounted/steady-state)" - 40
7/22/97
IRFBC30S/L
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V VGS = 0V, ID = 250pA
AVRDs(on) Static Drain-to-Source On-Resistance - 2.2 f2 VGs =10V, ID =2.2A CO
Vngh) Gate Threshold Voltage 2.0 - 4.0 V VDs = l/ss, ID = 250pA
git Forward Transconductance 2.5 - - S Ws = 50V, ID = 2.2AS
loss Drain-to-Source Leakage Current - 100 HA VDS = 600V, VGS = 0V
- - 500 VDs = 480V, VGS = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 31 ID = 3.6A
Qgs Gate-to-Source Charge - - 4.6 nC VDs = 360V
di Gate-to-Drain ("Miller") Charge - - 17 VGS = 10V, See Fig. 6 and 13 ©©
tum) Turn-On Delay Time - 11 - VDD = 300V
tr Rise Time - 13 - ns ID = 3.6A
tam) Turn-Off Delay Time - 35 - R9 = 129
tr FaIITime - 14 - RD =82Q, See Fig. 10 ((i)6)
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 660 - VGs = 0V
Coss Output Capacitance - 86 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 19 - f = 1.0MHz, See Fig. 5S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 3 6 MOSFET symbol D
(Body Diode) . A showing the [-,
ISM Pulsed Source Current integral reverse G (tLl
(Body Diode) C) - - 14 p-n junction diode. S
VSD Diode Forward Voltage - - 1.6 V To = 25°C, Is =3.6A, VGS = 0V GD
trr Reverse Recovery Time - 370 810 ns To = 25°C, IF =3.6A
er Reverse Recovery Charge - 2.0 4.2 pC di/dt = 100A/ps cos
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD =50V,
starting Tu = 25°C, L =41mH
Rs = 259, 'As = 3.6A. (See Figure 12)
© Iso s 3.6A, di/dt S 60A/ps, VDD f V(BR)DSS,
TJS150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
© Pulse width 3 3000ps; duty cycle 3 2%.
G) Uses IRFBC30 data and test conditions
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