IC Phoenix
 
Home ›  II30 > IRFBC30A,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFBC30A Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFBC30AFAIRCHILDN/a50avai600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFBC30AIRN/a68avai600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


IRFBC30A ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply (SMPS)600V 2.2Ω 3.6Al Uninterruptable Po ..
IRFBC30A ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD- 91889ASMPS MOSFETIRFBC30A®HEXFET Power MOSFET
IRFBC30AL ,600V Single N-Channel HEXFET Power MOSFET in a TO-262 packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 600 ..
IRFBC30AS ,600V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 91890BSMPS MOSFETIRFBC30AS/L®HEXFET Power MOSFET
IRFBC30L ,600V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFBC30S ,600V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 9.1015IRFBC30S/LPRELIMINARY®HEXFET Power MOSFETl Surface Mount (IRFBC30S)Dl Low-profile throug ..
ISL6313BCRZ , Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for Intel VR11 and AMD Applications
ISL6313IRZ , Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for Intel VR11 and AMD Applications
ISL6315CRZ , Two-Phase Multiphase Buck PWM Controller with Integrated MOSFET Drivers
ISL6316CRZ , Enhanced 4-Phase PWM Controller with 6-Bit VID Code Capable of Precision rDS(ON) or DCR Differential Current Sensing for VR10 Application
ISL6322CRZ , Four-Phase Buck PWM Controller with Integrated MOSFET Drivers and I2C Interface for Intel VR10, VR11, and AMD Applications
ISL6322CRZ-T , Four-Phase Buck PWM Controller with Integrated MOSFET Drivers and I2C Interface for Intel VR10, VR11, and AMD Applications


IRFBC30A
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
SMPS MOSFET
PD- 91889A
IRFBC30A
HEXFET© Power MOSFET
. Switch Mode Power Supply (SMPS) Voss Rds(on) max ID
o Uninterruptable Power Supply 600V 2.29 3.6A
0 High speed power switching
Benefits
o Low Gate Charge 09 results in Simple
Drive Requirement
q Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
0 Fully Characterized Capacitance and
Avalanche Voltage and Current
q Effective Coss specified (See AN 1001) T0-220AB G D s
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 3.6
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 2.3 A
IDM Pulsed Drain Current C) 14
Po @Tc = 25°C Power Dissipation 74 W
Linear Derating Factor 0.69 W/°C
VGS Gate-to-Source Voltage , 30 V
dv/dt Peak Diode Recovery dv/dt © 7.0 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf-in (1 .1N-m)
Typical SMPS Topology:
0 Single transistor Flyback
Notes C) through G) are on page 8

5/4/00
IRFBC30A
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V N/ss = 0V, ID = 250PA
AV(BR)DSS/AT_| Breakdown Voltage Temp. Coemcient - 0.67 - V/°C Reference to 25°C, ID = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - - 2.2 n Vss = 10V, ID = 2.2A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.5 V Vros = I/ss, ID = 250pA
loss Drain-to-Source Leakage Current : : 22550 pA V: , 333:; "tt c, g, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 l/ss = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
git Forward Transconductance 2.1 - - S VDs = 50V, ID = 2.2A
Qg Total Gate Charge - - 23 ID = 3.6A
Qgs Gate-to-Source Charge - - 5.4 nC Vos = 480V
di Gate-to-Drain ("Miller") Charge - - 11 Vss = 10V, See Fig. 6 and 13 (D
td(on) Turn-On Delay Time - 9.8 - VDD = 300V
tr RiseTime - 13 - ns ID = 3.6A
tdmff) Turn-Off Delay Time - 19 - Rs = 12n
tf Fall Time - 12 - RD = 82n,See Fig. 10 ©
Ciss Input Capacitance - 510 - VGS = 0V
Coss Output Capacitance - 70 - Vos = 25V
Crss Reverse Transfer Capacitance - 3.5 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 730 - I/ss = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 19 - Ves = 0V, VDs = 480V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 31 - VGS = 0V, VDS = 0V to 480V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© -- 290 mJ
IAR Avalanche Current© - 3.6 A
EAR Repetitive Avalanche Energy(0 - 7.4 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 1 .7
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
RNA Junction-to-Ambient - 62
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.6 MOSFETsymbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 14 p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V To = 25°C, ls = 3.6A, VGS = 0V ©
trr Reverse Recovery Time - 400 600 ns To = 25°C, IF = 3.6A
Qrr Reverse RecoveryCharge - 1.1 1.7 pC di/dt = 100A/ps ©
tion Forward Tum-On Time Intrinsictum-On time is negligible (tum-on is dominated by Ls+Lo)
2
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED