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IRFBA1404P
40V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package
International
TOR Rectifier
Typical Apglications
. Anti-lock raking Systems (ABS)
. Electric Power Steering (EPS)
AUTOMOTIVE MOSFET
PD - 93806B
|RFBA1404P
HEXFET0 Power MOSFET
. Electric Braking
. Radiator Fan Control
Benefits
. Advanced Process Technology
q Ultra Low On-Resistance
. Increase Current Handling Capability
. 175°C Operating Temperature
. Fast Switching
VDSS = 40V
RDS(on) = 3.7mQ
ID = 206A©
. Dynamic dv/dt Rating
. Repetitive Avalanche Allowed up to ijax
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFETE Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175°C junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220 TM is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is signfcantly increased current
handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance
silicon and the Super-220 TM package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualification standard.
These benefits make this design an extremely emcient and reliable
device tor use in Automotive applications and a wide variety of other
Super-Mom
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25''C Continuous Drain Current, VGS @ 10V 206©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 145© A
IDM Pulsed Drain Current Ci) 650
PD @Tc = 25°C Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
Vss Gate-to-Source Voltage l 20 V
EAS Single Pulse Avalanche Energy© 480 ml
IAR Avalanche CurrentCD See Fig.12a, 12b, 14, 15 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -40 to + 175
TSTG Storage Temperature Range -55 to + 175 ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Recommended clip force 20 N
1
8/14/02
IRFB/VI404P
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.036 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 3.7 mf2 VGS = 10V, ID = 95A (9
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gfs Forward Transconductance 106 - - S Vos = 25V, ID = 60A
loss Drain-to-Source Leakage Current - - 20 pA Ws = 40V, VGS = 0V
- - 250 Ws = 32V, VGs = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
% Total Gate Charge - 160 200 ID = 95A
Qgs Gate-to-Source Charge - 35 - nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - 42 60 VGS = 10V
tdwn) Turn-On Delay Time - 17 - Pho = 20V
tr Rise Time - 140 - ns ID = 95A
tdott) Turn-Off Delay Time - 72 - RG = 2.59
t, Fall Time -- 26 .- Ro = 0.219 (4)
LD Internal Drain Inductance - 2.0 - Between tal D
nH 6mm (0.25in.) Q )
Ls Internal Source Inductance - 5.0 - from package . G
and center of die contact s
Ciss Input Capacitance - 7360 - VGS = 0V
Coss Output Capacitance - 1680 - Vros = 25V
Crss Reverse Transfer Capacitance *-.r.- 240 __ pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 6630 - VGs = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 1490 - VGS = 0V, Vros = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 1540 - VGs = 0V, 1/ros = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 206© A showing the
Iss, Pulsed Source Current integral reverse G
(Body Diode) OD - - 650 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 95A, VGS = 0V ©
tn Reverse Recovery Time - 71 110 ns TJ = 25°C, IF = 95A
Qrr Reverse Recovery Charge - 180 270 nC di/dt = 100/Ups co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Case - 0.50
Recs Case-to-Sink, Flat, Greased Surface 0.5 - 'C/W
ReJA Junction-to-Ambient - 58
2
