IRFS59N10D ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters 100V 0.025Ω 59ABenefitsl Low Gat ..
IRFS610B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.3A, 200V, R = 1.5Ω @V = 10 VDS(on) ..
IRFS610B ,200V N-Channel MOSFETIRF610B/IRFS610BNovember 2001IRF610B/IRFS610B200V N-Channel MOSFET
IRFS614B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 2.8A, 250V, R = 2.0Ω @V = 10 VDS(on) ..
IRFS630A ,Advanced Power MOSFETIRFS630AAdvanced Power MOSFET
IRFS630B ,200V N-Channel MOSFETIRF630B/IRFS630BOctober 2001IRF630B/IRFS630B200V N-Channel MOSFET
ISL90840UIV2027 , Quad Digitally Controlled Potentiometers (XDCP)
ISL90842WIV1427Z , Quad Digitally Controlled Variable Resistors
ISL9106IRZ-T , 1.2A 1.6MHz Low Quiescent Current High Efficiency Synchronous Buck Regulator
ISL9200IRZ , Charging System Safety Circuit
ISL9200IRZ-T , Charging System Safety Circuit
ISL9201IRZ , Li-ion Battery Charger
IRFB59N10D-IRFS59N10D
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier SMPS MOSFET
Applications
. High frequency DC-DC converters
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses
0 Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
0 Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
PD - 93890
IRFB59N10D
IRFS59N10D
IRFSL59N10D
HEXFET© Power MOSFET
RDS(on) max ID
0.0259 59A
TO-220AB
IRFB59N10D
D2Pak TO-262
IRFS59N10D IRFSL59N10D
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 59
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 42 A
IDM Pulsed Drain Current C) 236
PD @TA = 25°C Power Dissipation © 3.8 W
PD @Tc = 25°C Power Dissipation 200
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 3.3 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torqe, 6-32 or M3 screw© 10 Ibf-in (1 .1N-m)
Typical SMPS Topologies
o Half-bridge and Full-bridge DC-DC Converters
o Full-bridge Inverters
Notes C) through © are on page 11
4/1 7/00
IRFB/IRFS/IRFSL59N1OD International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.11 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - - 0.025 n VGS = 10V, ID = 35.4A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V VDs = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 100V, VGS = 0V
- - 250 Vros = 80V, VGS = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 18 - - S Vros = 50V, ID = 35.4A
09 Total Gate Charge - 76 114 ID = 35.4A
Qgs Gate-to-Source Charge - 24 36 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 36 54 Vss = 10V, Cr)
tum...) Turn-On Delay Time - 16 - VDD = 50V
tr Rise Time - 90 - ns ID = 35.4A
tam) Turn-Off Delay Time - 20 - Rs = 2.59
tf Fall Time - 12 - VGS = 10V ©
Ciss Input Capacitance - 2450 - VGS = 0V
Coss Output Capacitance - 740 - Vos = 25V
Crss Reverse Transfer Capacitance - 190 - pF f = 1.0MHz©
Coss Output Capacitance - 3370 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 390 - VGS = 0V, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 690 - VGs = 0V, Vros = 0V to 80V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 510 m]
IAR Avalanche CurrentC) - 35.4 A
EAR Repetitive Avalanche Energy(0 - 20 mJ
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
ReJA Junction-to-Ambient© - 62
RQJA Junction-to-Ambient® - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 59 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 236 integral reverse G
(Body Diode) C) p-n junction diode. s
V5.3 Diode Forward Voltage - - 1.3 V To = 25°C, Is = 35.4A, VGS = 0V ©
trr Reverse Recovery Time - 130 200 ns To = 25°C, IF = 35.4A
Qrr Reverse RecoveryCharge - 0.75 1.1 pC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by L3+LD)
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