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IRFB4410PBF-IRFS4410TRLPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Tait Rectifier
Applications
q High Efficiency Synchronous Rectification in SMPS
PD - 95707E
lRFB4410PbF
IRFS4410PbF
llRFSL4410PbF
HEXFET® Power MOSFET
o Uninterruptible Power Supply D V 100V
q High Speed Power Switching DSS
. Hard Switched and High Frequency Circuits Rosmn) typ. 8.0mO
G max. 1 Omf2
. s ID 88A
Benefits
q Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
q Fully Characterized Capacitance and Avalanche _ ,. tgii,)
SOA . ... xteij,iist, tfiiiii) 'iit1t"i_sftl,
Enhanced body diode dV/dt and dI/dt Capability _ ".: S tl S F 'u ., f S
Lead-Free (f GD T (f
TO-220AB D2Pak TO-262
IRFB4410PbF IRFS4410PbF IRFSL441OPbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 88000 A
lr, @ To = 100°C Continuous Drain Current, Vas @ 10V 63000
G, Pulsed Drain Current © 380
PD @Tc = 25°C Maximum Power Dissipation 2000 w
Linear Derating Factor 1.3O W/°C
I/as Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery © 19 V/ns
TJ Operating Junction and -55 to + 175 °C
Tsms Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1 .1N-m)
Avalanche Characteristics
EAs (Thermallylimited) Single Pulse Avalanche Energy (3) 220 mJ
IAR Avalanche Current OD See Fig. 14, 15, 16a, 16b A
EAR Repetitive Avalanche Energy s mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rm Junction-to-Case © - 0.61 00
Rscs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °C/W
FU, Junction-to-Ambient, TO-220 © - 62
ROJA Junction-to-Ambient (PCB Mount) , D2Pak C8)0) - 40
1
05/02/07
IRFB/S/SL4410PbF International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Visnvss Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, ID = 250pA
AVungss/ATJ Breakdown Voltage Temp. Coefficient - 0.094 - V/°C Reference to 25°C, ID = ImA0)
RDS(on) Static Drain-to-Source On-Resistance - 8.0 10 mg I/as = 10V, ID = 58A C9
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 150pA
loss Drain-to-Source Leakage Current - - 20 pA VDS = 100V, I/ss = 0V
- - 250 Vos = 100V, Ves = 0V, TJ = 125°C
lsss Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
Rs Gate Input Resistance - 1.5 - Q f= 1MHz, open drain
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 120 - - S Vos = 50V, ID = 58A
q, Total Gate Charge - 120 180 nC ID = 58A
Qgs Gate-to-Source Charge - 31 - Vos = 80V
di Gate-to-Drain ("Miller") Charge - 44 - VGS = 10V s
thon) Turn-On Delay Time - 24 - ns VDD = 65V
t, Rise Time - 80 - ID = 58A
1mm Turn-Off Delay Time - 55 - Rs = 4.19
t, Fall Time - 50 - Vas = 10V s
Ciss Input Capacitance - 5150 - pF N/ss = 0V
Coss Output Capacitance - 360 - I/rss = 50V
Crss Reverse Transfer Capacitance - 190 - f = 1.0MHz
Cass eff. (ER) Effective Output Capacitance (Energy Related) - 420 - Vss = OV, Ihas = ov to 80V C), See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 500 - Vas = OV, vDS = OV to 80V tD, See Fig. 5
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 8800 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 380 A integral reverse G
(Body Diode) © p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 58A, Vss = 0V (S)
1,, Reverse Recovery Time - 38 56 ns T J = 25°C VR = 85V,
- 51 77 Tu =125°C IF = 58A
0,, Reverse Recovery Charge - 61 92 nC To = 25°C di/dt = 100A/ps ©
- 110 170 TJ=125°C
Inns, Reverse Recovery Current - 2.8 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Calculated continuous current based on maximum allowable junction © Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A. as Cass while Vos is rising from O to 80% Voss.
© Repetitive rating; pulse width limited by max. junction C) Cass eff. (ER) is a fixed capacitance that gives the same energy as
temperature. Coss while I/ce is rising from 0 to 80% Voss.
© Limited by Tumax, starting Tu = 25°C, L = 0.14mH When mounted on I" square PCB (FR-4 or G-10 Material). For recommended
Rs = 259, MS = 58A, VGS =10V. Part not recommended for use footprint and soldering techniques refer to application note #AN-994.
above this value. © R8 is measured at T, approximately 90°C.
© Iso 3 58A, di/dt g 650A/ps, VDDS V(BR)DSS, TJg 175°C_ G) Rch (end of life) for D2Pak and TO-262 = 0.75°C/W. Note: This is the maximum
s Pulse width 5 400ps; duty cycle s; 2%. measured value after 1000 temperature cycles from -55 to 150°C and is
accounted for by the physical wearout of the die attach medium.
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