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IRFB4115G
150V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
International
Tait Rectifier
PD - 96216
llRFl34115GPbF
HEXFETID Power MOSFET
Applications V 150V
0 High Efficiency Synchronous Rectification in SMPS DSS
o Uninterruptible Power Supply RDS(on) typ. 9.3mQ
q High Speed Power Switching
0 Hard Switched and High Frequency Circuits max. 11mQ
ID (Silicon Limited) 104A
Benefits
q Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness Dr.
q Fully Characterized Capacitance and Avalanche tr "gilt:
SOA "t8rf' \.
Enhanced body diode dV/dt and dI/dt Capability 's .st
Lead-Free G
Halogen-Free To-220AB
IRFB4115GPbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V 104
ID @ TC = 100°C Continuous Drain Current, Vas @ 10V 74 A
G, Pulsed Drain Current OD 420
PD @Tc = 25°C Maximum Power Dissipation 380 w
Linear Derating Factor 2.5 W/°C
Vss Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery (3 18 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lbf-in (1.1N-m)
Avalanche Characteristics
EAS(Thermallylimited) Single Pulse Avalanche Energy Q) 220 md
IAR Avalanche Current Ci) See Fig. 14, 15, 22a, 22b A
EAR Repetitive Avalanche Energy (D md
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rm Junction-to-Case © - 0.40
'us Case-to-Sink, Flat Greased Surface 0.50 - °C/W
FU, Junction-to-Ambient - 62
1
01/06/09
IRFB4115GPbF International
TOR Rectifier
Static © T, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V Vas = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.18 - V/°C Reference to 25°C. ID = 3.5mAC)
Rosmn, Static Drain-to-Source On-Resistance - 9.3 11 m9 Vas = IOM, lo = 62A Ci)
Vegan) Gate Threshold Voltage 3.0 - 5.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 150V, Vss = 0V
- - 250 Vos = 150V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Re Internal Gate Resistance - 2.3 - Q
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 97 - - S Vos = 50V, ID = 62A
Cl, Total Gate Charge - 77 120 nC ID = 62A
Qgs Gate-to-Source Charge - 28 - VDs = 75V
di Gate-to-Drain ("Miller") Charge - 26 - Vss = 10V ©
stnc Total Gate Charge Sync. (Qg - di) - 51 - ID = 62A, VDS =0V, Vas = 10V
td(on) Turn-On Delay Time - 18 - ns VDD = 98V
t, Rise Time - 73 - ID = 62A
tam) Turn-Off Delay Time - 41 - Rs = 2.29
t, Fall Time - 39 - Vss = 10V ©
Ciss Input Capacitance - 5270 - pF I/tss = 0V
Coss Output Capacitance - 490 - Vos = 50V
Crss Reverse Transfer Capacitance - 105 - f = 1.0 MHz, See Fig. 5
Cass eff. (ER) Effective Output Capacitance (Energy Related) - 460 - l/ss = OV, Vos = 0V to 120V Ci), See Fig. 11
cu, eff. (TR) Effective Output Capacitance (Time Related) - 530 - Vas = 0V, Vos = 0V to 120V ©
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 104 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 420 A integral reverse G
(Body Diode) © p-n junction diode. s
Va, Diode Forward Voltage - - 1.3 V T, = 25°C, ls = 62A, Vss = 0V GD
t, Reverse Recovery Time - 86 - ns TJ = 25°C VR = 130V,
- 110 - TJ=125°C |F=62A
Q,, Reverse Recovery Charge - 300 - nC TJ = 25°C di/dt = 100A/ps ©
- 450 - TJ = 125°C
IRRM Reverse Recovery Current - 6.5 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by max. junction s Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature, as COSS while Vos is rising from O to 80% Voss.
C) Limited by Tomax, starting TJ = 25''C, L = 0.11mH © Crass eff. (ER) is a fixed capacitance that gives the same energy as
Rs = 259, IAS = 62A, Vas =10V. Part not recommended for use Coss while Vos is rising from O to 80% Voss.
above this value. co Re is measured at Tu approximately 90°C.
© ISD s: 62A, di/dtS104OA/ps, vDD s: V(Bmss, T J LC 175°C.
q) Pulse width S 400ps; duty cycle S 2%.
2
