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IRFB33N15DPBFIRN/a12000avai150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFS33N15DTRLPIRN/a2145avai150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


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IRFB33N15DPBF-IRFS33N15DTRLP
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD- 95537
lnterryotif.Tal lRFB33N15DPbF
TOR Rectifier SMPS MOSFET lRFS33N15DPbF
lfRFSL33N15DPbF
H EXFET8 Power MOSFET
Applications
. High frequency DC-DC converters
o Lead-Free
Voss RDS(on) max In
150V 0.0569 33A
Benefits
q Low Gate-to-Drain Charge to Reduce
Switching Losses
0 Fully Characterized Capacitance Including " fgii, 1 gf5rC si(iiit
Effective Coss to Simplify Design, (See \‘1': "1)ti)(ij: Nil), 's.
App. Note AN1001) \‘\‘ Y]! i, 's
q Fully Characterized Avalanche Voltage '
and Current TO-220AB D2Pak T0262
IRFB33N15D IRFS33N15D IRFSL33N15D
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 24 A
IDM Pulsed Drain Current (D 130
Po @TA = 25°C Power Dissipation © 3.8 W
PD @Tc = 25°C Power Dissipation 170
Linear Derating Factor 1.1 W/°C
Ves Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 4.4 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range oc
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw© IO lbf-in (1.1N-m)
Typical SMPS Topologies
q Telecom 48V input Active Clamp Forward Converter
Notes co through (D are on page 11
1
7/21/04

IRFB/llRFS/lRFSL33N15DPbF
International
Static © TJ = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V Viss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.18 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - 0.056 Q Vss = 10V, ID = 20A ©
VGS(1h) Gate Threshold Voltage 3.0 - 5.5 V Vos = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vos = 150V, Vss = 0V
- - 250 VDS = 120V, Vss = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 A VGs = 30V
GSS Gate-to-Source Reverse Leakage - - -100 n Vas = -30V
Dynamic @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 14 - - S Vos = 50V, ID = 20A
% Total Gate Charge - 60 90 ID = 20A
As Gate-to-Source Charge - 17 26 no VDs = 120V
di Gate-to-Drain ("Miller") Charge - 27 41 Vss = 10V, ©©
td(on) Turn-On Delay Time - 13 - VDD = 75V
tr Rise Time - 38 - ns ID = 20A
td(off) Turn-Off Delay Time - 23 - Rs = 3.69
if Fall Time - 21 - VGS = 1OVQ ©
Ciss Input Capacitance - 2020 - l/css = 0V
Coss Output Capacitance - 400 - VDS = 25V
Crss Reverse Transfer Capacitance - 91 - pF f = 1.0MHz©
Coss Output Capacitance - 2440 - Vas = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 180 - Vss = 0V, VDS = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 320 - VGS = 0V, Vos = 0V to 120V (S)
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 330 mJ
IAR Avalanche CurrentCD - 20 A
EAR Repetitive Avalanche Energy© - 17 mJ
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.90
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
RQJA Junction-to-Ambient© - 62
RQJA Junction-to-Ambient} - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current _ _ 33 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - _ 130 integral reverse G
(Body Diode) (DOD p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 20A, VGS = 0V (9
trr Reverse Recovery Time - 150 - ns Tu = 25°C, IF = 20A
Qrr Reverse RecoveryCharge - 920 - nC di/dt = 100A/ps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2

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