IRFB3307PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package IRFB3307PbFIRFS3307PbFIRFSL3307PbFHEXFET Power MOSFET
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ISL6292-2CR4Z , Li-ion/Li Polymer Battery Charger
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ISL6292BCRZ-T , Li-ion/Li Polymer Battery Charger
ISL6292CCR3Z , Li-ion/Li Polymer Battery Charger
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IRFB3307PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
Benefits
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
q Improved Gate, Avalanche and Dynamic dV/dt
PD - 95706D
lRFB3307PbF
IRFS3307PbF
llRFSL3307PbF
HEXFET® Power MOSFET
D Vnss 75V
Rosmn) typ. 5.0mg
max. 6.3mf2
s lo 120A
Ruggedness
0 Fully Characterized Capacitance and Avalanche .. ,. @
SOA (1tjj)it, ttiii)) 'iiii1'i .- "s,
Enhanced body diode dV/dt and dl/dt Capability "N l: S iil,s 's., "u, .. . S
Lead-Free if G , if
TO-220AB D2Pak TO-262
IRFB3307PbF IRFS3307PbF IRFSL3307PbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, Vas @ 10V 1200D& A
ID @ To = 100°C Continuous Drain Current, Ves @ 10V 84C)(D
IDM Pulsed Drain Current C) 510
PD @TC = 25°C Maximum Power Dissipation 200(D W
Linear Derating Factor 1.3O WPC
Ves Gate-to-Source Voltage * 20 V
T, Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lir in (1 .1 bl. m)
Avalanche Characteristics
EAsurhermaor,mitets) Single Pulse Avalanche Energy © 270 mJ
|AR Avalanche Current OD See Fig.14, 15,16a,16b A
EAR Repetitive Avalanche Energy co mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rm Junction-to-Case © - 0.61 (D
Recs Case-to-Sink, Flat Greased Surface ,TO-220 0.50 - °C/W
RQJA Junction-to-Ambient, TO-MO © - 62
Roux Junction-to-Ambient (PCB Mount) , D2Pak O© - 40
1
01/20/12
IRFB/S/SL3307PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V Vas = 0V, ID = 250pA
AV(BH,DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.069 - VPC Reference to 25°C, ID = 1mA©
RDSM Static Drain-to-Source On-Resistance - 5.0 6.3 m9 N/ss = 10V, ID = 75A ©
vegan) Gate Threshold Voltage 2.0 - 4.0 v Vos = I/ss, b = 150pA
loss Drain-to-Source Leakage Current - - 20 pA l/os = 75V, I/ss = 0V
- - 250 vDS = 75V, l/ss = ov, TJ = 125°C
less Gate-to-Source Fo rward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
RG Gate Input Resistance - 1.5 - Q f=1MHz,open drain
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 98 - - S Vos = 50V, ID = 75A
Qu Total Gate Charge - 120 180 nC ID = 75A
q, Gate-to-Source Charge - 35 - Vos = 60V
qu Gate-to-Drain ("Miller") Charge - 46 - Vas = 10V s
tom Turn-On Delay Time - 26 - ns VDD = 48V
tr Rise Time - 120 - b = 75A
ton Tu rn-Off Delay Time - 51 - Ra = 3.99
t Fall Time - 63 - Vas = 10V s
Ciss Input Capacitance - 5150 - pF N/ss = 0V
Cass Output Capacitance - 460 - VDS = 50V
Crss Reverse Transfer Capacitance - 250 - f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) - 570 - N/ss = 0V, Vos = 0V to 60V C), See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 700 - Vss = 0V, Vos = 0V to 60V @See Fig. 5
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 130C) A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 510 A integral reverse G
(Body Diode) © p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 75A, I/ss = 0V (3
dv/dt Peak Diode Recovery - 11 - V/ns T, =175°C,|s = 75A, Vos = 75V GD
t, Reverse Recovery Time - 38 57 ns Tu = 25°C VR = 64V,
- 46 69 Tu = 125°C IF = 75A
Q,, Reverse Recovery Charge - 65 98 nC T, = 25°C di/dt = 100A/ps s
- 86 130 Tu = 125°C
IRRM Reverse Recovery Current - 2.8 - A Tu = 25°C
u Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction © Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
OD Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting Tu = 25°C, L = 0.096mH
Rs = 259, IAs = 75A, Vai; =1OV. Part not recommended for use
above this value.
© ISD I 75A, di/dt I 530A/ps, VDD S V(BR)DSS: TJ S 175°C
s Pulse width S 400ps; duty cycle S 2%.
as Cass while I/rs is rising from O to 80% Voss.
co Cass eff. (ER) is a fixed capacitance that gives the same energy as
COSS while l/DS is rising from 0 to 80% Voss.
When mounted on 1" square PCB (FR-4 or G-1O Material). For recom mended
footprint and soldering techniques refer to application note #AN-994.
© Re is measured at To approximately 90°C.
GD) Fuoc (end of life) for D2Pak and TO-262 = 0.75°C/W. Note: This is the
maximum measured value after 1000 temperature cycles from -55 to 150°C
and is accounted for by the physical wearout of the die attach medium.
