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INTERNATIONAL RECTIFIER
INTE RNATIONAL RECTI FIER
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IRF9Z14
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
llrttennatii
Rectifier
PD-9.736
IRFQZ14
HEXFET® Power MOSFET
Dynamic dv/dt
Repetitive Ava
P-Channel
Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
175°C Operating Temperature
Ease of Paralleling
Simple Drive Requirements
Rating
lanche Rated
VDSS = -601/
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max, Units
ID @ To = 25°C Continuous Drain Current, Vss @ -10 V -6.7
In @ To = 100°C Continuous Drain Current, l/tss @ -10 V -4.7 A
IDM Pulsed Drain Current C) _ -27
Po @ Tc = 25°C Power Dissipation 43 W
Linear Derating Factor 0.29 WPC
I/ss Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 140 mJ
IAR Avalanche Current CO -6.7 A
EAR Repetitive Avalanche Energy (D 4.3 md
dv/dt Peak Diode Recovery dv/dt © -4.5 V/ns
To Operating Junction and -55 to +175
Tsro Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 be-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Ram Junction-to-Case - - 3.5
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Ram Junction-to-Ambient - L - _p_ 62
lRF9Z14
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter Min, Typ. Max. Units Test Conditions
V(Bnpss Drain-to-Source Breakdown Voltage -60 - - V VGs=OV, |D=-250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0,060 - VPC Reference to 25°C, |D=-1mA
Rosm) Static Drain-to-Source On-Resistance - - 0.50 n l/ss-s-MOV, ID=-4.0A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs=VGs, |D=~250uA
gis Forward Transconductance 1.4 - - S VDs=-25V, ID=-4.0A ©
loss Drain-to-Source Leakage Current - -..e.. -1 00 uA Vos=-60V, Vas=OV
- -- -500 Vos=-48V, VGs=0V, Tu=150oC
lass Gate-to-Source Forward Leakage - - -100 n A VGs=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=20V
Qg Total Gate Charge - - 12 kr=-6.7A
Qgs Gate-to-Source Charge - - 3.8 nC Vos=-48V
di Gate-to-Drain ("Miller") Charge - - 5.1 VGs=-10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 11 - Voo=-30V
tr Rise Time - 63 - ns b---6.7A
tNor) Turn-Off Delay Time ...-. 10 - Fk--24n
tf Fall Time - 31 - RD=4.OQ See Figure 10 ©
LD Internal Drain Inductance - 4.5 - itvri'J.itiil/ii.') D
nH from package GE
Ls Internal Source Inductance - 7.5 -- and center 6f pt;
die contact 3
Gigs Input Capacitance - 270 - Nus--tN
Coss Output Capacitance - 170 - pF VDs=-25V
Crss Reverse Transfer Capacitance - 31 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - -6 7 MOSFET symbol D
(Body Diode) . A showing the Hy
ISM Pulsed Source Current - _ -27 integral reverse G ttic
(Body Diode) CO p-n junction diode. s
l/so Diode Forward Voltage - - -5.5 V TJ=25°C, Is=-6.7A, VGs=0V ©
in Reverse Recovery Time - 80 160 ns TJ=25°C, IF=-6.7A
Gr Reverse Recovery Charge - 0.096 0.19 pC di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-25V, starting TJ=25°C, L=3.6mH
HG=25Q, |As=-6.7A (See Figure 12)
TJS175°C
© Isos-GJA, di/dtf90A/gs, VDDSV(BR)DSS,
C4) Pulse width f 300 ps; duty cycle 52%.
