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IRF9520SIRN/a6000avai-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
IRF9520STRLIRN/a793avai-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package


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IRF9520S-IRF9520STRL
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
llrtternatidrttig
1:212 Rectifier
HEXFET® Power MOSFET
tt Surface Mount
tt Available in Tape & Reel
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 P-Channel
0 175°C Operating Temperature
0 Fast Switching
Deseription
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.915
IRF9520S
Voss = -100V
ID = -6.8A
RDS(on) Tr. 0.609
on-resistance and cost-effectiveness,
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
Parameter Max. f Units
lo © Tc = 25°C Continuous Drain Current, Vas Iii) -10 V -6.8
In @ Ts = 100°C Continuous Drain Current, Ves (ti) -10 V -4.8 A
IDM Pulsed Drain Current C) -27
Po @ Tc = 25°C Power. Dissipation 60 W
Po @ TA = 25°C Power Dissipation (PCB Mount)" 3.
Linear Derating Factor 0.40 W P C
Linear Derating Factor (PCB Mount)" 0.025
Vas Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy C2) 300 mJ
[AR Avalanche Current C) -6.8 A
EAR Repetitive Avalanche Energy C) 6.0 md
dv/dt Peak Diode Recovery dv/dt © -5.5 V/ns
Tu, Tsms Junction and Storage Temperature Range -55 to +175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case) I
Thermal Resistance
Parameter Min. Typ. Max. l Units
RM: Junction-to-Case - - 2.5
Ram Junction-to-Ambient (PCB mount)" - - 40 °C/W
Ram Junction-to-Ambient - - 62
** When mounted on 1" square PCB (FR-4 or G-1O Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
|RF95208
Electrical Characteristics Iii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V Ves=0V, lo=-250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.1O - VPC Reference to 25°C, io=-1mA
Roam) Static Drain-to-Source On-Resistance - - 0.60 n Ves=-1OV, b=-4.1A C4)
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS=VGs, |o=-250uA
gts Forward Transconductance 2.0 - - S Vos=~50V, Io=-4.1A a
loss Drain-to-Source Leakage Current - - -100 WA Vos=-1OOV, VGS=0V
- - -500 VDs=-80V. l/ss-HN, TJ=150°C
less Gate-to-Source Forward Leakage - - -100 n A VGs=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=20V
09 Total Gate Charge - - 18 |n=-6.8A
Qgs Gate-to-Source Charge - - 3.0 " Vos=-80V
di Gate-to-Drain ("Miller") Charge - - 9.0 VGs=-1OV See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 9.6 - Voo=-50V
tr Rise Time - 29 - n s kr=-6.8A
1am) Tu rn-Off Delay Time - 21 _ Rs=18f2
tt Fall Time - 25 - Ro=7.1Q See Figure 10 ©
Lo Internal Drain Inductance - 4,5 - titgr)n.ltitnl i-el,
nH from package SQ}
Ls Internal Source Inductance - 7.5 - Ind center df ,
die contact s
Ciss Input Capacitance - 390 - VGs=0V
Cass Output Capacitance - 170 - PF Vos=-25V
Crss Reverse Transfer Capacitance - 45 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
is Continuous Source Current - - -6 8 MOSFET symbol D
(Body Diode) . A showing the rec,--),
ISM Pulsed Source Current - - -27 integral reverse G l“
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - -6.3 V TJ=2SOC, Is=-6.8A, VGs=OV GD
trr Reverse Recovery Time - 98 200 ns TJ=25°C, lp=-6.8A
G, Reverse Recovery Charge - 0.33 0.66 wc di/dt=100A/ys Cs)
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-25V, starting TJ=250C, L=9.7mH
RG2259, |As=-6.8A (See Figure 12)
© 1503-6.8A, di/de110A/ws, VDDSV(BR)Dss,
TJS1 75°C
© Pulse width f 300 ps; duty cycle C2%.
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