IRF9362TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package IRF9362PbFHEXFET Power MOSFETV -30 VDS
IRF9362-IRF9362TRPBF
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International
IEER Rectifier
V08 -30 v
(33:03:33) 21.0 mg
(33:33.23) 32.0 mn
as (typical) 13 nC
(@TA |=025°C) -8.0 A
Applications
PD - 96312A
IRF9362PbF
HEXFET© Power MOSFET
Top View SO-8
q Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Featu res
Resulting Benefits
Industry-Standard SO-8 Package
results in Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen
=> Environmentally Friendlier
Orderable part number Package Type Standard Pack Note
Form Quantity
IRF9362PbF SO8 Tube/Bulk 95
IRF9362TRPbF SO8 Tape and Reel 4000
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage -30 V
l/ss Gate-to-Source Voltage 120
ID @ TA = 25°C Continuous Drain Current, Ves @ -10V -8.0
ID @ T, = 70°C Continuous Drain Current, Ves @ -10V -6.4 A
IDM Pulsed Drain Current O) -64
PD @TA = 25°C Power Dissipation © 2.0 W
PD @TA = 70°C Power Dissipation © 1.3
Linear Derating Factor 0.016 W/°C
TJ Operating Junction and -55 to + 150 "C
TSTG Storage Temperature Range
Notes OD through © are on page 2
11/18/10
IRF9362PbF
Static © T J = 25°C (unless otherwise specified)
International
TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage -30 __- ._- V Vas = 0V, ID = -250pA
ABN/rss/AT: Breakdown Voltage Temp. Coefficient - 0.021 - V/°C Reference to 25°C, ID = -1mA
Rosmn) . . . -- 17.0 21.0 Vas = -10v, ID = -8.0A ©
Static Drain-to-Source On-Resistance _ 25.7 32.0 mn Vas = -4.5V, ID = -6.4A ©
VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V Vos = Vss, ID = -25uA
AVGS(.h, Gate Threshold Voltage Coefficient - -5.8 - mV/°C
loss Drain-to-Source Leakage Current - - -1.0 p A VDs = -24V, Ves = 0V
- - -150 V05 = -24V, I/ss = 0V, T,: = 125°C
less Gate-to-Source Forward Leakage - - -100 n A I/ss = -20V
Gate-to-Source Reverse Leakage - - 100 Vss = 20V
gfs Forward Transconductance 12 - - S Vos = -10V, ID = -6.4A
q, Total Gate Charge © - 13 - nC Vos = -15V, Vas = -4.5V, ID = - 6.4A
09 Total Gate Charge © - 26 39 I/ss = -10V
As Gate-to-Source Charge © - 3.8 - nC Vos = .15v
di Gate-to-Drain Charge © - 6.3 - ID = -6.4A
Re Gate Resistance © - 17 - n
tdm Turn-On Delay Time - 5.2 - VDD = -301/, Ves = -10V ©
tr Rise Time - 5.9 - ns '0 = -1.0A
tam Turn-Off Delay Time - 115 - Ra = 6.09
t, Fall Time -- 53 -- See Figs. 19a & 19b
Ciss Input Capacitance -- 1300 -- Vas = 0V
Coss Output Capacitance -- 250 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0kHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 94 mJ
lAn Avalanche Current C) - -6.4 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - -2.0 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - -64 integral reverse G
(Body Diode) (D p-n junction diode. S
l/sc, Diode Forward Voltage - - -1.2 V Tu = 25°C, ls = -2.0A, Vss = 0V ©
trr Reverse Recovery Time - 32 48 ns T J = 25°C, IF = -2.0A, Va, = -24V
l Reverse Recovery Charge -- 2O 30 no di/dt = 100/ys ©
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Drain Lead Cs) - 20 °CNV
ReJA Junction-to-Ambient © - 62.5
Notes:
OD Repetitive rating; pulse width limited by max. junction temperature.
© Starting Tu = 25°C, L = 4.6mH, Rs = 259, IAS = -6.4A.
© Pulse width f 400ps; duty cycle S 2%.
© When mounted on 1 inch square copper board.
s R9 is measured at Tu of approximately 90°C.
© For DESIGN AID ONLY, not subject to production testing.
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