IRF842 ,N-Channel Power MOSFETs/ 8A/ 450 V/500Vapplications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifi ..
IRF843 ,N-Channel Power MOSFETs/ 8A/ 450 V/500VFEATURES:
control, very fast switching, ease of paralleling and ... .
temperature stability of ..
IRF8513 ,30V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Q1 Max. Q2 Max. UnitsV Drain-to-Source Voltage 30DSV ..
IRF8707 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDS Drain-to-Source Voltage 30VV Gate-to-S ..
IRF8707GTRPBF ,Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDrain-to-Source Voltage 30DSVVGate-to-Sou ..
IRF8707PBF , HEXFET Power MOSFET
ISL6208CRZ-T ,High Voltage Synchronous Rectified Buck MOSFET Driverfeatures a three-state PWM input that, QFN - Quad Flat No Leads - Package Outlineworking together w ..
ISL6209CB ,High Voltage Synchronous Rectified Buck MOSFET Driverfeatures 4A typical sink current for the lower gate - Fast Output Rise Timedriver. The 4A typical s ..
ISL6209CB-T ,High Voltage Synchronous Rectified Buck MOSFET DriverApplicationsmicroprocessor, from reversed-output-voltage damage. • Core Voltage Supplies for Intel ..
ISL6211CA ,Crusoe Processor Core-Voltage RegulatorFeaturesRegulator • High Efficiency Over Wide Load RangeThe ISL6211 is a single-output power-contro ..
ISL6211CA ,Crusoe Processor Core-Voltage RegulatorISL6211TMData SheetNovember 2001 FN9043.1Crusoe™ Processor Core-Voltage
ISL6211CA ,Crusoe Processor Core-Voltage RegulatorApplicationsprecision overcurrent protection is required, an external current-sense resistor may op ..
IRF842-IRF843
TRANSISTORS N-CHANNEL
- 'W t:
IIE D I] uassqse UUUBSE’A a ll, " Data Sheet No. PD-9. 376G
INTERNATIONAL RECTIFIER Y-yt-is
INTERNATIONAL RECTIFIER IQER‘
REPETITIVE AVALANCHE AND dvldt RATED*_ _
HEDtraiirrihrpLeuumsirretsta 533nm=a4o
n - _ _: IRF841
il N-CHANNEL _ IRF842
s . _ IIFIF843 '
500 Volt, 0.85 Ohm HEXFET _ Product Summary
TO-220AB Plastic Package
Part Number VDS RDS(on) ID
The HEXFEP technology is the key to International
Rectifier‘s advanced line of power MOSFET transistors. IRF840 500V 0.859 am
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state 1RF841 450V 0.85f1 8.0A
resistance combined with high transconductance; superior IRF842 _ 500V 1.1a 7.0A
reverse energy and diode recovery dvldt capability.
IRF843 _ 450V 1.19 _ IZOA
The HEXFET transistors also feature ‘all of the well
established advantages of MOSFETs such as voltage FEATURES:
control, very fast switching, ease of paralleling and ... .
temperature stability of the electrical parameters. El Repetitive Avalanche Ratings
ty Dynamic dvldt Rating
They are well suited for applications such as switching . . .
power supplies, motor controls, inverters,choppers,audio D Simple Drive 1yuirements
amplifiers and high energy pulse circuits. El Ease of Paralleling
CASE STYLE AND DIMENSIONS 1 mm-
m (o my mum
““‘Hm 3.1m. nap - 11250052)
354m. IMI in A. Imam)
TERM! -t0llitCE
YERMZ -lti1AOt
TERM I - GAVE
-""T"-7 ms to 15mm. ' " ill mm
4.32 ilkH0l
1509(0 .594)
10.54 (0.415)
_r..T..C.l
213mm) -
215m 090)
Mt lil 210)
CE (MSG)
Lszcnoux-x
051mm! CCC,
nmoms) [
Tr-"-;
tll, ll uomoss) _.J _ osmomn
0636(0017)
TJs-rrtim IISIDIH
L15WM5l 1 N IMI
Cu- Style TO-ZZOAB
Dimensions in Millimeter: and (Inches) t '
S.2rlflfl'''"
13.97 f) 550)
'This data sheet applies to product with batch codes that Begin with a "biff'i'
lLE 0 fl uassqsa unussaq u U
IRFtH0, 1i1l'8/11, IRF842, IRF843 Devices
INTERNATIONAL
Tr39-13
Absolute Maximum Ratings
Parameter 1RF840. IRFMI IRF842, (RF343 Units
ID a Tc = 25°C Continuous Drain Current tro 7.0 A
(D © Tc = 100°C Continuous Drain Current 5.1 4.4 A
'DM Pulsed Drain Cummt ti) 32 . 28 A
PD @ Tc = 25°C Max. Rawer Dissipation 125
Linear Deming F3110! 1.0 WIK Q
VGS t1attrttHiaurctt Wltags 120
EAS Single Pulse Avalancha Energy (2) 510 _ In]
" (See Rg. MI
I AR AvaIancha Current O 8.0 A
(Repetitive or NomReptstitivel (See EAR)
EAR Repetitive Avalanche Energy ti) 13 mi
(See 'AH’
dvldt Peak Diode Recovery dvldt © " Vlns
_ (See Fig. 17)
Tg Operating Junction -65 to 150 ''C
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 h. (1.6mm) from case for 10sl "
Electrical Characteristics @ 1, = 26°C (Unless Otherwise Specified)
Pavamewr Type Min. Tm Max. Units Test Conditions
BVDSS WalrrttrSourtm Breakdown Voltage It1F840 500
IRF842 - - v v65 = ov, ID = 250 FA
IRF841
IRF843 450
RDS(on) Static Drairt-ttStngrctt IRF840 - 0.70 0.86 _
On-Slale Resistance © IRFSM 0 VGS = 10V, ID = 4.4A
IRFMZ -
IRF843 0.86 1.1
In On-Sme Drain Current © IRF840
Wn) mam 8.0 _ ' - A Vos > low X Roston) Max.
|RF842 7,0 vas " 10V
IRF843 .
VGS(lh) Gate Threshold Voltaga ALL 2.0 - 4.0 V VDS I vas, ID = 250M
Ws meard Transcanduetanea © ALL 4.9 7.4 - so V03 2 50V, IDS =, 4.4A
loss Zero Gate Voltage Drain Cunant ALL - - 250 M vns '" Max. Ristr'ng. vas - 0V
- -. 1000 v.35 = 0.8 x Max. Rating
vos = ov, Tg = 125°C
ttiss Gat+ttrSourett Leakage Forward ALL - - 500 nA vas = 20V
'GSS Gateto-Source leakage Reverse ALL - - -600 nA V65 " -20V
09 Total Gate Charge ALL - 42 63 nC VGS = 10V, ID = 8.0A
V = 0.8 Rati
09, Gatirto4iuutce Charge ALL - 8.2 9.3 nC i'l'N=g, 16 x Max. xng
Ars Gattrttrt3rain ("Muller") Charge - 22 32 " (Independent ot operating temperature)
tdtonl Turn-On Delay Time ALL - 14 21 ns VDD = 250v, ID = MA, RG = 9m
k Rise Time AU. _ 23 35 n: RD = 300
tdtott) Turn-Oh Delay Time ALL - 49 74 n: See Hg. 15
I, Fall Tlme ALL - 20 30 ns (independent ot operating temperatum)
LD Internal Drain Inductance ALL - 4.5 - nH Measured (tom the drain Maditied MOSFET symbol
lead, 6mm (0.25 in.) from showing the Internal
package ta center of die inttuctanrss
Ls Internal Source Inductance ALL - 7.5 - nH Measured from this source
lead, 6mm (0.25 In.) from
package to source bonding _
pad. I
Ciss Input Capacitance ALL - 1300 - pF V55 = 0V, V95 = 25V
Cuss Output Capacitance ALL - 180 - pF f = 1.0 MHz
Crss Revexso Transfer Capacitance ALL - 45. - pF See Fig. 10
