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IRF840ALIRN/a20avai500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRF840ASIRN/a43avai500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF840ASTRLIRN/a12000avai500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


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IRF840AL-IRF840AS-IRF840ASTRL
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
PD- 91901 B
. . SMPS MOSFET IRF840AS
Tait Rectifier IRF840AL
HEXFET© Power MOSFET
Applications
0 Switch Mode Power Supply (SMPS) Voss RDS(on) max ID
o Uninterruptible Power Supply 500V 0.859 8.0A
0 High Speed Power Switching
Benefits
a Low Gate Charge 09 Results in Simple 14ii)i) iii)
Drive Requirement "lff'f, '
o Improved Gate, Avalanche and Dynamic {t
dv/dt Ruggedness
0 Fully Characterized Capacitance and szak TO-262
Avalanche Voltage and Current IRF840AS IRF840AL
q Effective Coss Specified (See AN 1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 1OV© 8.0
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10V© 5.1 A
IDM Pulsed Drain Current OD6) 32
Po @Tc = 25°C Power Dissipation 125 W
Po @TA = 25°C Power Dissipation 3.1
Linear Derating Factor 1.0 W/''C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies
o Two TransistorForward
o Haft Bridge
0 FullBridge
Notes (O through © are on page 10

12/16/99
IRF840AS/L
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.58 - V/°C Reference to 25°C, ID = 1mA©
Rosom Static Drain-to-Source On-Resistance - 0.85 Q VGS = 10V, ID = 4.8A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current _- _- 22550 pA V: =- 'eg', V2: =- g, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 I/ss = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 3.7 - - S Vos = 50V, ID = 4.8A
09 Total Gate Charge - - 38 ID = 8.0A
Qgs Gate-to-Source Charge - - 9.0 nC Vros = 400V
di Gate-to-Drain ("Miller") Charge - - 18 N/ss = 10V, See Fig. 6 and 13 ©©
tum) Turn-On Delay Time - 11 - VDD = 250V
tr Rise Time - 23 - ns ID = 8.0A
td(off) Turn-Off Delay Time - 26 - Rs = 9.19
t, Fall Time - 19 - RD = 31Q,See Fig. 10 ©©
Ciss Input Capacitance - 1018 - N/ss = 0V
Coss Output Capacitance - 155 - VDs = 25V
Crss Reverse Transfer Capacitance - 8.0 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1490 -- VGS = 0V, I/os = 1.0V, f = 1.0MHz
Coss Output Capacitance - 42 - Veg = 0V, Vos = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 56 - Veg = 0V, Vos = 0V to 480V ©©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 510 mJ
IAR Avalanche Current© - 8.0 A
EAR Repetitive Avalanche Energyc0 - 13 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1.0 °C/W
ReJA Junction-to-Ambient ( PCB Mounted, steady-state)' - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 8.0 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse
(Body Diode) OD - - 32 p-n junction diode. s
VSD Diode Forward Voltage - - 2.0 V To = 25°C, Is = 8.0A, VGS = 0V ©
trr Reverse Recovery Time - 422 633 ns To = 25°C, IF = 8.0A
G, Reverse RecoveryCharge - 2.0 3.0 PC di/dt = 100A/ps (0
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
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