IRF7842TR ,Leaded 40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for NotebookProcessor Power5.0m@V = 10V ..
IRF7842TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications Synchronous MOSFET for NotebookV R maxQg (typ.)DSS DS(on)Processor Power Secondary S ..
IRF7853 ,100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplications4 5G DBenefits Low Gate to Drain Charge to Reduce SO-8Top View Switching Losses F ..
IRF7853TRPBF , Primary Side Switch in Bridge Topology
IRF7854 ,80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplications Primary Side Switch in Bridge or two-V R max IDSS DS(on) Dswitch forward topologies u ..
IRF7854PBF ,80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplications2 7S D3 6BenefitsS D Low Gate to Drain Charge to Reduce 4 5G D Switching LossesSO- ..
ISL58831 ,Dual Laser Driver with APC Amplifier and Spread Spectrum OscillatorApplicationsPinout• Combo CD-R + DVD-RISL58831• DVD±RW to 8X(24 LD QFN)TOP VIEW• Writable optical d ..
ISL59112IEZ-T7 , 40MHz Rail-to-Rail Video Buffer
ISL5927IN ,Dual 14-bit, +3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz.FeaturesD/A Converter• Low Power . . . . . 233mW with 20mA Output at 130MSPSThe ISL5927 is a dual 1 ..
ISL59421IUZ , 865MHz Multiplexing Amplifier
ISL59424IRZ , 1GHz Triple Multiplexing Amplifiers
ISL59440IAZ , 400MHz Multiplexing Amplifier
IRF7842TR
Leaded 40V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR. Rectifier
Applications
o Synchronous MOSFET for Notebook
Processor Power
. Secondary Synchronous Rectification
for Isolated DC-DC Converters
o Synchronous Fet for Non-lsolated
PD - 95864
IRF7842
HEXFET*) Power MOSFET
RDSM) max
09 (typ.)
5.0mQ@VGs = 10V 33nC
DC-DC Converters S 313 I 8313 D
Benefits s 111 E 313 D
0 Very Low RDS(0n) at 4.5V VGS S :1] _ 6:133 D
0 Low Gate Charge G M mm
q Fully Characterized Avalanche Voltage
. SO-8
and Current Top View
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 40 V
VGS Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 14 A
|DM Pulsed Drain Current C) 140
Po @TA = 25°C Power Dissipation © 2.5 W
Po (g)TA = 70°C Power Dissipation C) 1.6
Linear Derating Factor 0.02 Wl°C
T J Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Drain Lead s _ 20 °C/W
ROJA Junction-to-Ambient C9Cs) - 50
Notes OD through co are on page 9
4/26/04
IRF7842
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BN/oss Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coemcient - 0.037 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.0 5.0 mg VGS = 10V, ID = 17A ©
- 4.7 5.9 vGS = 4.5V, ID = 14A ©
Vegan) Gate Threshold Voltage 1.35 - 2.25 V Vos = VGS, ID = 250pA
AVGS(m) Gate Threshold Voltage Coefficient - - 5.6 - mV/°C
IDss Drain-to-Source Leakage Current - - 1.0 pA Vos = 32V, VGS = 0V
- - 150 Vos = 32V, VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 81 - - S Vos = 20V, ID = 14A
09 Total Gate Charge - 33 50
0951 Pre-Vth Gate-to-Source Charge - 9.6 - Vos = 20V
0952 Post-Vth Gate-to-Source Charge - 2.8 - nC VGS = 4.5V
qu Gate-to-Drain Charge - 10 - ID = 14A
ngdr Gate Charge Overdrive - 10.6 -
st Switch Charge (Qgs2 + di) - 12.8 -
Iss Output Charge - 18 - nC Vros = 16V, VGS = 0V
Re Gate Resistance - 1.3 TBD Q
tum) Turn-On Delay Time - 14 - VDD = 20V, VGS = 4.5V ©
t, Rise Time - 12 - ID = 14A
tam Turn-Off Delay Time - 21 - ns Clamped Inductive Load
tr Fall Time - 5.0 -
Ciss Input Capacitance - 4500 - Vss = 0V
cuss Output Capacitance - 680 - pF Vos = 20V
Crss Reverse Transfer Capacitance - 310 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 50 m J
IAR Avalanche Current (D - 14 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the L,-,,
ISM Pulsed Source Current - - 140 integral reverse G E
(Body Diode) C) p-n junction diode. R
VSD Diode Forward Voltage - - 1.0 V To = 25°C, Is = 14A, VGS = 0V ©
tn Reverse Recovery Time - 99 150 ns T J = 25°C, IF = 14A, VDD = 20V
Qrr Reverse Recovery Charge - 11 17 no di/dt = 100A/ps ©
2
