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IRF7828
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International PD-94602
TOR Rectifier IRF7828
HEXFET0 Power MOSFET for DC-DC Converters
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
- Low Conduction Losses
- Low Switching Losses s ET . 'IIE D
s D12 H 73]: D
D . ti ttf
escnp Ion . s D13 6:]: D
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented G DI“ 5311 D
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high SO-8 Top View
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7828 has been optimized for all parameters that DEVICE CHARACTERlSTlCSS
are critical in synchronous buck converters including IRF7828
RDS‘on , gate charge and Cdv/dt-induced turn-on immunity.
The IRF7828 offers particulary low RDSW) and high Cdv/ RDSW 9.5mf2
dt immunity for synchronous FET applications.
q, 9.2nC
The package is designed for vapor phase, infra-red, QSW 3.7nC
convection, or wave soldering techniques. Power Q 6 1 C
dissipation of greater than 3W is possible in a typical oss . n
PCB mount application.
Absolute Maximum Ratings
Parameter Symbol IRF7828 Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage Vss t20
Continuous Drain or Source T, = 25°C l,, 13.6
Current (Va, 2 4.5V) TL = 70°C 11 A
Pulsed Drain CurrentC) L, 100
Power Dissipation T, = 25°C PD 2.5 W
TL = 70°C 1.6
Junction & Storage Temperature Range T J’TSTG -55 to 150 °C
Continuous Source Current (Body Diode) ls 3.1 A
Pulsed Source Current® L, 100
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-AmbientG) RM 50 °CNV
Maximum Junction-to-Lead Fi,, 20 °C/W
12/5/02
IRF7828 International
TOR Rectifier
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BVDSS 30 - - V l/ss = 0V, ID = 250pA
Breakdown Voltage
Static Drain-Source Rom") - 9.5 12.5 mg l/ss = 4.5V, ID = 10A©
on Resistance
Gate Threshold Voltage VGSW 1.0 - - V VDS = VGSJD = 250pA
Drain-Source Leakage IDSS - - 1.0 Vos = 24V, Vas = 0
Current - - 150 PA Vos = 24v, Va, = o,
Tj = 125°C
Gate-Source Leakage (ass - - i100 nA Vas = WUN
Current
Total Gate Chg Cont FET q, - 9.2 14 V65: 5.0V, |D=15A, VDS=16V
Total Gate Chg Sync FET a, - 7.3 - l/ss = 5V, l/ost 100mV
Pre-l/th Qss, - 2.5 - VD,5 = 15V, ID = 10A
Gate-Source Charge
Post-Vth ass, - 0.8 - nC
Gate-Source Charge
Gate to Drain Charge QGD - 2.9 -
Switch Chg(Q952 + 09d) as,, - 3.7 -
Output Charge As,, - 6.1 - VDS = 10V, Vas = 0
Gate Resistance Rs - 2.3 - Q
Turn-on Delay Time tum") - 6.3 - Vs, = 15V, ID = 10A
Rise Time t, - 2.7 - ns Vss = 4.5V
Turn-off Delay Time l Wit) - 9.7 - Clamped Inductive Load
Fall Time t, - 7.3 -
Input Capacitance Ciss - 1010 -
Output Capacitance Coss - 360 - pF Vos = 15V, VGS = 0
Reverse TransferCapacitance C,,,,, - 110 -
Source-Drain Rating & Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward Va, - - 1.0 V IS = 10A®, Vas = 0V
Voltage'
Reverse Recovery Q,, - 13 - nC di/dt - 700A/ps
Charge) Vos = 16V, Va, = OV, IS = 15A
Reverse Recovery OMS] - 13 - nC di/dt = 7OOA/ps
Charge (with Parallel (with 10BQO40)
Schottky) Vos = 16V, Vas = 0V, IS = 15A
Notes: co Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width s 400 us; duty cycle S 2%.
(D When mounted on 1 inch square copper board
(E) Typ = measured - 0055
(9 Typical values of RDs(on) measured at Vss = 4.5V, 06, st and Qoss
measured at Vss = 5.0V, IF = 10A.
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