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IRF7507-IRF7507TR
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package
International
a:i,aRliuctifier
PD - 91269l
IRF7507
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
N-CHANNEL MOSFET
Sl 3% 8 ILL] D1
G1EEE2 713101
S2 BIL 613102
Gacr/-- 511102
P-CHANNEL MOSFET
Top View
N-Ch P-Ch
VDSS 20V -20V
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micr08 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the M icr08
Micr08 an ideal device for applications where printed circuit board space is at
a premium. The low prohle (<1 .1 mm) of the Micr08 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
N-Channel P-Channel
VDS Drain-Source Voltage 20 -20 V
ID @ TA = 25°C Continuous Drain Current, VGs 2.4 -1.7
ID @ TA = 70°C Continuous Drain Current, VGS 1.9 -1.4 A
IDM Pulsed Drain CurrentC) 19 -14
PD @TA = 25°C Maximum Power Dissipation 1.25 W
PD @TA = 70°C Maximum Power Dissipation@ 0.8 W
Linear Derating Factor 10 mW/°C
VGs Gate-to-Source Voltage 4c 12 V
VGSM Gate-to-Source Voltage Single Pulse tp<10pS 16 V
dv/dt Peak Diode Recovery dv/dt © 5.0 l -5.0 V/ns
T J , TSTG Junction and Storage Temperature Range -55 to + 150 "C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Thermal Resistance
Parameter Max. Units
Ram Maximum Junction-to-Ambient co 100 ''CIW
1

12/1/98
IRF7507 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. N-Ch 20 - - V =0V.l =250 A
v D -t-S B kd Volt GS '0 p
(BR)DSS ran o ource rea own o age P-Ch -20 - - V VGS= OV, ID: -250pA
. N-Ch - 0.041 - Reference to 25''C I =1mA
AV IATB kd Volt T .00 t ., '0
(BR)DSS J rea own 0 age emp oe Kyen P-Ch - -0.012 - V/ C Reference to 25°C, ID = -1mA
N-Ch - 0.085 0.14 VGS = 4.5V, ID = 1.7A ©
. . . - 0.120 0.20 VGS = 2.7V, ID = 0.85A ©
R Stat c Dra n-to-So rce On-Res stance
DS(ON) I I u I P-Ch - 0.17 0.27 n Vas = -4.5v, ID =-1.2Aa)
- 0.28 0.40 VGs = -2.7V, ID =-0.6A ©
N-Ch 0.7 - - V =V I =250A
v Gate Threshold Volta e DS GS, D y
GS(th) g P-Ch -0.7 - - V Vros = VGS, ID = -250PA
N-Ch 2.6 - - VDS = 10V, ID = 0.85A 0
gfs orward ransconductance P-Ch 1.3 - - s VDS = -10V, ID = -0.6Acp
N-Ch - - 1.0 Ws-- 16V, VGS=0V
. P-Ch - - -1.0 VDs = -16V, VGs = 0V
I D - - L k
DSS ran to Source ea ageCurrent N-Ch - - 25 pA VDS = 16V, VGS = 0V, To = 125°C
P-Ch - - -25 l/DS = -16V, VGS = OV, T: = 125°C
less Gate-to-Source Forward Leakage N-P - - i100 Ves = i 12V
Qg Total Gate Charge N-Ch - 5.3 8.0 N-Channel
P-Ch - 5.4 8.2
N-Ch - 0.84 1.3 lD=1.7/k,VDs=16V,VGs=4.5V
Qgs Gate-to-Source Charge . . no ©
P-Ch - 0.96 1.4
. " . " N-Ch - 2.2 3.3 P-Channel
di Gate-to-Drain( Miller )Charge P-Ch - 2.4 3.6 k, = -1.2A, VDS = -16V,VGs = -4.5V
tdwn) Turn-On Delay Time SE: - g: - N-Channel
. . N'Ch I 2'4 I VDD = 10V, ID = 1.7A, Rs = 6.09,
tr Rise Time P-Ch - 35 - RD = 5.7O
N-Ch - 15 - ns ©
td(off) Turn-Off Delay Time P Ch 38 P-Channel
N-Ch 16 VDD = -10V, ID = -1.2A, Rs = 6.09,
F ll Ti - - =
t, a me P-Ch - 43 - RD 8.39
Ciss Input Capacitance 2%: - 'it - N-Channel
'd h - 1 0 - VGS=0V,VDS=15V,f=1.0MHz
Coss Output Capacitance ( - 30 - ' ©
rig: - 16310 - P-Channel
Crss Reverse Transfer Capacitance P Ch ;V; l/ss = 0V, VDS = -15V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
N-Ch - - 1.25
Is Continuous Source Current (Body Diode) P-Ch - - -1 .25 A
N-Ch - - 19
ISM Pulsed Source Current (Body Diode) co P-Ch - - -14
. N-Ch - - 1.2 v TJ = 25''C, Is = 1.7A, VGS = 0v 0
V313 Diode Forward Voltage P-Ch - - -1.2 T: = 25°C, Is = -1.2A, VGS = OV 0
t Re e se Reco e Time N-Ch - 39 59 ns N-Channel
rr V r V W I P-Ch - 52 78 T J = 25''C, IF = 1.7A, di/dt = 100A/ps
N-Ch - 37 56 P-Channel ©
Orr Reverse Recovery Charge P-Ch - 63 95 nC T J = 25°C, IF = -1.2A, di/dt = -100A/ps
Notes:
co Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 21 )
© N-Channel ISDS 1.7A, di/dt S 66A/ps, VDD f V(BR)DSS, TJ S 150°C co Surface mounted on FR-4 board, t S 10sec.
P-Channel ISD S -1.2A, di/dt S 100A/ps, VDD S ViBR)DSS, T: S 150°C
2

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