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IRF7507PBFIRN/a400avai20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package


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IRF7507PBF
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package
PD - 95218
IlRF7507PbF
International
TOR Rectifier
HEXFET8 Power MOSFET
q Generation V Technology N-CHANNELMOSFET
q Ultra Low On-Resistance s1rrre- 851: D1 N-Ch P-Ch
o Dual N and P Channel MOSFET G1 2 7a]: DI
o Very Small SOIC Package 3 6 -
o Low Profile (<1.1mm) S2 CTL]"- ED D2 Voss 20V 20V
0 Available in Tape & Reel G2 4 5cm D2
q Fast Switching P-CHANNEL/WET RDSW) 0.1359 0.279
0 Lead-Free Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micr08 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micr08 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micr08 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
N-Channel P-Channel
VDs Drain-Source Voltage 20 -20 V
ID @ TA = 25°C Continuous Drain Current, l/ss 2.4 -1.7
In @ TA = 70°C Continuous Drain Current, l/ss 1.9 -1.4 A
IDM Pulsed Drain Current(0 19 -14
PD @TA = 25°C Maximum Power Dissipation@ 1.25 W
PD @TA = 70°C Maximum Power Dissipation@ 0.8 W
Linear Derating Factor 10 mW/°C
N/ss Gate-to-Source Voltage , 12 V
VGSM Gate-to-Source Voltage Single Pulse tp<10PS 16 V
dv/dt Peak Diode Recovery dv/dt © 5.0 I -5.0 V/ns
Tu , Ts-re Junction and Storage Temperature Range -55 to + 150 °C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Thermal Resistance
Parameter Max. Units
Ras Maximum Junction-to-Ambient © 100 °C/W
1

5/11/04
IRF7507PbF International
IEER Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. N-Ch 20 - - V = OV I = 250pA
V Drain-to-Source Breakdown Volta e GS ' D
(BR)DSS g P-Ch -20 - - V Was = OV, ID = -250pA
. . N-Ch - 0.041 - Reference to 25°C I =1mA
AV AT Br kdownVolt Tm.C fficient " '0
(BRDSSI J ea o o age e p oe 0 e P-Ch - 4h012 - V/ C Reference to 25°C, ID = -1mA
N-Ch - 32:2 [Ill 168:2-31- 1:32;
RDS(ON) Static Drain-to-Source On-Resistance - . . Q GS - . ' D - . Q
P-Ch - 0.17 0.27 VGs = -4.5V, ID =-1.2Aa
- 0.28 0.40 VGS = -2.7v, ID =-0.6A 0
Vesuh) Gate Threshold Voltage 2%: fy, - - V Y,” = [te :0 = 225:ng
. - . - - DS = Gs, D = -
N-Ch 2.6 - - Vos =10V,lo = 0.85A 0
F d T d t
gfs onNar ranscon UC ance P-Ch 1.3 - - S 1/ros = -1OV, ID = -O_6A©
N-Ch - - 1.0 Vos-- 16 V, Vss--0V
. P-Ch - - -1.0 VDs = -16V, Vas = 0V
I D -t -S L k C t
DSS ran 0 ource ea age urren N-Ch - - 25 pA VDs = 16 V, VGS = 0V, TJ = 125°C
P-Ch - - -25 VDS = -16V, l/ss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage N-P - - t100 Vss = t 12V
% Total Gate Charge N-Ch - 5.3 8.0 N-Channel
P-Ch - 5.4 8.2
N-Ch - 0 84 1 3 ID =1.7A,VDS = 16V, Vas = 4.5V
Qgs Gate-to-Source Charge . . nC Cl)
P-Ch - 0.96 1.4
. " . " N-Ch - 2 2 3 3 P-Channel
di Gate-to-Drain} Miller )Charge P-Ch - 2:4 ai; ID = -1 .2A, VDS = -16V, I/ss = M.5V
tdion) Turn-On Delay Time 2:8: _- id _- N-Channel
. . N-Ch - 2'4 - Vroro =10v, ID =1.7A, Rs = 6.09,
tr Rise Time P-Ch - 35 - ns RD = 579 (4)
tn(ott) Turn-Off Delay Time lg, I 3;: I P-Channel
. N-Ch - 16 - vDD = -10v, ID = -1.2A, Rs = 6.09,
tt Fall Time P-Ch - 43 - RD = 8.39
Ciss Input Capacitance EC: - 260 - N-Channel
( - 240 - Vss = 0v, Vos = 15V, f = 1.0MHz
Coss Output Capacitance N-Ch - 130 - pF (3)
P-Ch - 130 - P-Channel
Crss Reverse Transfer Capacitance N-Ch - 61 - Vss = 0V, VDs = -15V, f = 1.0MHz
P-Ch - 64 -
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
N-Ch - - 1.25
Is Continuous Source Current (Body Diode) P-Ch - - -1 .25 A
N-Ch - - 19
ISM Pulsed Source Current (Body Diode) co P-Ch - - -14
. N-Ch - - 1.2 To = 25°C, ls =1.7A,VGS = OV 0
Vet) Diode Forward Voltage P-Ch - - -1.2 V Tu = 2500' ls = -1.2A, Vss = 0V ©
t R R Ti N-Ch - 39 59 ns N-Channel
" everse ec0Very Ime 54(3): - i) 7: To = 25°C, IF = 1.7A, di/dt = 100A/ps
- - 7 5 P-Channel ©
ar, Reverse Recovery Charge P-Ch - 63 95 nC T J = 25°C, IF = -1.2A, di/dt = -100A/ps
Notes:
co Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle S 2%.
max. junction temperature. ( See fig. 21 )
© N-Channel ISD S 1.7A, di/dt S 66A/ps, VDD S V(BR)DSS, TJ S 150°C G) Surface mounted on FR-4 board, ts: 10sec.
P-Channel ISD S -1.2A, di/dt S 100A/ps, VDD S V(BR)DSS: Tu S 150°C
2
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