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IRF7504-IRF7504TR
-20V Dual P-Channel HEXFET Power MOSFET in a Micro 8 package
International
::ritatRectifier
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micr08 package, with half the footprint area of the
PD - 9.1267G
IRF7504
HEXFET® Power MOSFET
Top View
8 lll01
5:11:02
VDSS = -20V
RDS(on) = 0.279
standard SO-8, provides the smallest footprint available in M icro8
an SOIC outline. This makes the Micr08 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1 .1mm) of the Micr08 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGs @ -4.5V -1.7
In @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -1.4 A
IDM Pulsed Drain Current co -9.6
PD@TA= 25°C Power Dissipation 1.25 W
Linear Derating Factor 10 mW/°C
VGS Gate-to-Source Voltage i 12 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ,T3TG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
Ran Maximum Junction-to-Ambient) - 100 °CNV
All Micr08 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97
I RF7504 International
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGs = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.012 - V/°C Reference to 25°C, ID = -1mA
. . . - - 0.27 VGs = -4.5V, ID = -1.2A ©
RDS(ON) Static Drain-to-Source On-Resistance - - 0.40 f2 I/ss = -2.7V, ID = -0.60 A ©
VGS(th) Gate Threshold Voltage -0.70 - - V VDs = VGs, ID = -250pA
gfs Forward Transconductance 1.3 - - S VDs = -10V, ID = -O.60A
'Dss Drain-to-Source Leakage Current - - -1.0 p A VDS = -16V, VGS = 0V
- - -25 V93 = -16V, VGs = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - -100 n A l/ss = -12V
Gate-to-Source Reverse Leakage - - 100 I/ss = +12V
% Total Gate Charge - 5.4 8.2 ID = -1.2A
Qgs Gate-to-Source Charge - 0.96 1.4 nC VDs = -16V
di Gate-to-Drain ("Miller") Charge - 2.4 3.6 I/ss = -4.5V, See Fig. 6 and 9 ©
tum) Turn-On Delay Time - 9.1 - VDD = -10V
tr Rise Time - 35 - ID = -1.2A
tdmm Turn-Off Delay Time - 38 - ns Rs = 6.09
tf Fall Time - 43 - RD = 8.3n, See Fig. 10 ©
Ciss Input Capacitance - 240 - VGs = 0V
Coss Output Capacitance - 130 - pF VDs = -15V
Crss Reverse Transfer Capacitance - 64 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -1 25 MOSFET symbol D
(Body Diode) . A showing the H
ISM Pulsed Source Current - - A). 6 integral reverse G l
(Body Diode) CO p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 v T J = 25°C, ls = -1.2A, l/GS = 0v ©
trr Reverse Recovery Time - 52 78 ns TJ = 25°C, IF = -1.2A
er Reverse RecoveryCharge - 63 95 n0 di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycles 2%.
max. junction temperature. ( See fig. 11 )
© ISD s -1.2A, di/dt s 100A/ps, VDD s V(BR)DSS: (4) Surface mounted on FR-4 board, ts 10sec.
T Js 150°C
