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IRF7501-IRF7501TR
20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package
International
:raRRectifier
PD - 91265H
IRF7501
PRELIMINARY
HEXFET*) Power MOSFET
0 Generation V Technology
q Ulrtra Low On-Resistance 5113: I 3:11:01
. Dual N-Channel MOSFET 6151: lm LIIIn01 VDSS =20V
. Very Small SOIC Package 82 [rIEd- 63:: D2
0 Low Profile (<1.1mm) 4 l 5
. Available in Tape & Reel G2 [ ll ll ( D2 RDs(on) = 0.1359
0 Fast Switching Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designerwith an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micr08 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micr08 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micr08 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Micr08
Parameter Max. Units
Ws Drain-Source Voltage 20 V
In @ TA = 25''C Continuous Drain Current, Vss @ 10V 2.4
ID @ TA = 70°C Continuous Drain Current, V33 @ 10V 1.9 A
IDM Pulsed Drain Current C) 19
Po @TA = 25°C Maximum Power Dissipation) 1.25 W
Pro @TA = 70°C Maximum Power Dissipation © 0.8 W
Linear Derating Factor 0.01 W/°C
VGSM Gate-to-Source Voltage Single Pulse tp<10ps 16 V
VGS Gate-to-Source Voltage 1: 12 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ , TSTG Operating Junction and Storage Temperature Range -55 to + 150 ''C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient GD 100 "C/W
All Micr08 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
1
4/30/98

IRF7501 International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.041 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 0.085 0.135 Q VGS = 4.5V, ID = 1.7A ©
- 0.120 0.20 VGS = 2.7V, ID = 0.85A co
VGS(th) Gate Threshold Voltage 0.70 - - V Vros = VGs, ID = 250pA
git Forward Transconductance 2.6 - - S Vros = 10V, ID = 0.85A
loss Drain-to-Source Leakage Current - - 1.0 pA Vros = 16V, VGS = 0V D
- - 25 V95 =16V,VGs = 0V, TJ = 125 C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -121/
Qg Total Gate Charge - 5.3 8.0 ID = 1.7A
Qgs Gate-to-Source Charge - 0.84 1.3 nC Vos = 16V
di Gate-to-Drain ("Miller") Charge - 2.2 3.3 VGs = 4.5V, See Fig. 9 co
td(on) Turn-On Delay Time - 5.7 - VDD = 10V
tr Rise Time - 24 - ns ID = 1.7A
tam) Turn-Off Delay Time - 15 - Rs = 6.on
tr Fall Time - 16 - RD = 579 ©
Ciss Input Capacitance - 260 - VGS = 0V
Coss Output Capacitance - 130 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 61 - f = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.25 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) © - - 19 p-n junction diode. s
va, Diode Forward Voltage - - 1.2 V T: = 25°C, Is = 1.7A, VGs = 0V ©
trr Reverse Recovery Time - 39 59 ns T: = 25°C, IF = 1.7A
Qrr Reverse Recovery Charge - 37 56 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycle g 2%
max. junction temperature. ( See Fig. 10)
© ISDs 1.7A, di/dt f 66A/ps, VDDS V(BR)DSSy © Surface mounted on FR-4 board, t Closet:
T J 3 150°C
2

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