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IRF7475
12V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94531 B
llRF7475
HEXFET© Power MOSFET
International
TOR Rectifier
Applications
q High Frequency Point-of-Load Voss RDS(on) max titg
Synchronous Buck Converter for 12V 15mQ@VGS = 4.5V 19nC
Applications in Networking &
Computing Systems.
s EED‘ ' B D
Benefits 2 7
s ECU B CD] D
0 Very Low RDS(on) at 4.5V l/ss 3 " r 6
o Ultra-Low Gate Impedance s m m D
o Fully Characterized Avalanche Voltage G 3'34 5m D
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 12 V
VGS Gate-to-Source Voltage t 12
ID @ TA = 25°C Continuous Drain Current, l/ss @ 10V 11
ID @ T, = 100°C Continuous Drain Current, Vas @ 10V 7.0 A
IDM Pulsed Drain Current CD 88
Pry @TA = 25°C Power Dissipation s 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
T J Operating Junction and -55 to + 150 ''C
Tsms Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 20 °CNV
ROJA Junction-to-Ambient © _ 50
Notes co through (3 are on page 10
1
04/19/05
IRF7475 International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 12 - - V Vss = 0V, ID = 250PA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient -- 0.014 -- VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance -- 11.5 15 mn Vss = 4.5V, ID = 8.8A G)
- 2O 50 l/ss = 2.8V, ID = 5.5A ©
VGS(th) Gate Threshold Voltage 0.6 - 2.0 V Vos = Vas, ID = 250pA
Al/sam) Gate Threshold Voltage Coefficient - 3.2 - mV/°C
loss Drain-to-Source Leakage Current - - 100 pA Vos = 9.6V, Ves = 0V
- - 250 Vos = 9.6V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 12V
Gate-to-Source Reverse Leakage - - -200 Vas = -12V
gfs Forward Transconductance 22 - - S Vos = 6.0V, ID = 8.8A
% Total Gate Charge - 13 19
0951 Pre-Vth Gate-to-Source Charge - 2.6 - I/rss = 6.0V
QgsZ Post-Wh Gate-to-Source Charge -- 1.5 -- nC Vss = 4.5V
di Gate-to-Drain Charge -- 3.9 -- ID = 7.0A
ngdr Gate Charge Overdrive - 5.0 - See Fig. 16
st Switch Charge (0952 + di) - 5.4 -
Qoss Output Charge - 17 - nC Vos = 10V, Vss = 0V
td(on) Turn-On Delay Time - 7.5 - VDD = 6.0V, Vas = 4.5V ©
tr Rise Time - 10 - ID = 8.8A
tam) Turn-Off Delay Time - 16 - ns Clamped Inductive Load
tf Fall Time - 7.6 -
Ciss Input Capacitance - 1590 - Vas = 0V
Coss Output Capacitance - 1310 - pF l/rs = 6.0V
Crss Reverse Transfer Capacitance - 260 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ng e ergy 180
|AR v e rre 8.8
EAR nergy 0.25
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - -- 11 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 88 integral reverse G
(Body Diode) Coco p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 8.8A, I/ss = 0V ©
tn Reverse Recovery Time - 42 63 ns TJ = 25°C, IF = 8.8A, VDD = 10V
er Reverse Recovery Charge - 44 66 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
