IRF7469TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max(m IDSS DS(on) D High Frequency Isolated DC-DC40V 17@V = 10V 9.0A GS Conve ..
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IRF7470TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications HEXFET Power MOSFET High Frequency DC-DC ConvertersV R max IDSS DS(on) D with Sy ..
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ISL32175EIVZ , QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers
ISL32175EIVZ , QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers
ISL3283EIHZ-T , ±16.5kV ESD Protected, 125°C, 3.0V to 5.5V, SOT-23/TDFN Packaged, 20Mbps, Full Fail-safe, Low Power, RS-485/RS-422 Receivers
ISL34340 ,WSVGA 24-Bit Long-Reach Video SERDES with Bidirectional Side-ChannelBlock DiagramSCL2I CSDAVCMGENERATORRAM SERIOPPRE-TXEMPHASIS3V/H/DESERIONMUXTDM 8b/10bDEMUXRGB24RX E ..
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IRF7469TRPBF
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 95286
International
Tait, Rectifier SMPS MOSFET IRF7469PbF
HEXFET6 Power MOSFET
Applications
Voss RDS(on) max(mQ) ID
o High Frequency Isolated DC-DC
Converters with Synchronous Rectification 40V 17@VGS = 10V 9.0A
for Telecom and Industrial Use
o High Frequency Buck Converters for
Computer Processor Power 1 8
o Lead-Free s CI ' E D
s 1:112 _ 7:33 D
. 3 l 6
Benefits s CE 333 D
o Ultra-Low Gate Impedance G 514 5333 D
0 Very Low RDS(on) To p View 80-8
. Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 40 V
VGS Gate-to-Source Voltage , 20 V
ID @ TA = 25''C Continuous Drain Current, VGs @ 10V 9.0
In @ TA = 70°C Continuous Drain Current, VGS @ 10V 7.3 A
IDM Pulsed Drain Current© 73
Po @TA = 25°C Maximum Power Dissipation@ 2.5 W
Po @TA = 70''C Maximum Power Dissipation© 1.6 W
Linear Derating Factor 0.02 mW/°C
To , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJL Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 oCNV
Notes co through © are on page 8
1
08/1 7/04
IRF7469PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGs = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.04 - Vl°C Reference to 25°C, ID = 1mA
. . . - 12 17 Vcs=10V,lD=9.0A ©
RDS(on) Static Drain-to-Source On-Resistance 15.5 21 mQ VGS = 4.5V, ID = 7.2 A G)
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V VDs = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vros = 32V, VGS = 0V
- - 100 Vos = 32V, VGS = 0V, To = 125''C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -200 I/cs = -16V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 17 - - S Vros = 20V, ID = 7.2A
% Total Gate Charge - 15 23 ID = 7.2A
Qgs Gate-to-Source Charge - 7.0 11 nC VDs = 20V
qu Gate-to-Drain ("Miller") Charge - 5.0 8.0 V33 = 4.5V co
Qoss Output Gate Charge - 16 24 V68 = 0V, I/os = 16V
tdmn) Turn-On Delay Time - 11 - VDD = 20V
tr Rise Time - 2.2 - ns ID = 7.2A
td(off) Turn-Off Delay Time - 14 - Rs = 1.89
tr Fall Time - 3.5 - VGs = 4.5V ©
Ciss Input Capacitance - 2000 - VGS = 0V
Coss Output Capacitance - 480 - Vos = 20V
Crss Reverse Transfer Capacitance - 28 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 210 mJ
IAR Avalanche Current© - 7.2 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 73 p-n junction diode. s
VsD Diode Forward Voltage - 0.80 1.3 v To = 25°C, ls = 7.2A, veg = 0v ©
- 0.65 - To =125°C, ls = 7.2A, l/ss = 0V ©
trr Reverse Recovery Time - 47 71 ns To = 25°C, IF = 7.2A, VR=15V
Qrr Reverse Recovery Charge - 91 140 nC di/dt = 100Alps G)
trr Reverse Recovery Time - 77 120 ns To = 125°C, IF = 7.2A, VR=20V
Qrr Reverse Recovery Charge - 150 230 nC di/dt = 100A/ps ©
2
