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IRF7467IORN/a100avai30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7467INFN/a100avai30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7467IRN/a380avai30V Single N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7467 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 93883BIRF7467SMPS MOSFET®
IRF7467 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedV R max IDSS DS(on) D ..
IRF7467 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedV R max IDSS DS(on) D ..
IRF7468 ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max(mΩ) Ω) Ω) Ω) Ω) IDSS DS(on) Dl High Frequency Isolated DC-DC40V 15.5@V = 10V 9. ..
IRF7468TR ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 93914DIRF7468SMPS MOSFET®HEXFET Power MOSFET
IRF7468TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7468PbFSMPS MOSFETHEXFET Power MOSFET
ISL3173EIUZ , ±15kV ESD Protected, 3.3V, Full Fail-Safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL3173EIUZ , ±15kV ESD Protected, 3.3V, Full Fail-Safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL32175EIVZ , QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers
ISL32175EIVZ , QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers
ISL3283EIHZ-T , ±16.5kV ESD Protected, 125°C, 3.0V to 5.5V, SOT-23/TDFN Packaged, 20Mbps, Full Fail-safe, Low Power, RS-485/RS-422 Receivers
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IRF7467
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
Applications
o High Frequency DC-DC Isolated
SMPS MOSFET
PD - 93883B
IRF7467
HEXFET0 Power MOSFET
Converters with Synchronous Rectification Voss RDS(on) max ID
for Telecom and Industrial use 30V 12mQ 11A
0 High Frequency Buck Converters for
Computer Processor Power
Benefits
0 Ultra-Low Gate Impedance s E1 , 3310
q Very Low RDS(on) at 4.5V VGS 2 fiejiiitis
. s EEE H 331 D "s _ _
0 Fully Characterized Avalanche Voltage lf (ii'' "ii''"''"
and Current s BI 33 D J:
G BI“ 33: D
Top View SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vros Drain-Source Voltage 30 V
VGs Gate-to-Source Voltage i 12 V
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 11
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.0 A
IDM Pulsed Drain Current0) 90
Pro @TA = 25°C Maximum Power Dissipation 2.5 W
Pro @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
T J , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead - 20
RNA Junction-to-Ambient © - 50 °C/W
Notes co through (D are on page 8
1

3/25/01
IRF7467
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmoss Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, lo = 250pA
AV(sRVss/ATo Breakdown Voltage Temp. Coemcient - 0.029 - V/°C Reference to 25''C, ID = 1mA
- 9.4 12 N/ss =10V, ID =11A ©
RDS(on) Static Drain-to-Source On-Resistance - 10.6 13.5 mn VGs = 4.5V, ID = 9.0A ©
- 17 35 V33 = 2.8V, ID = 5.5A ©
VGS(th) Gate Threshold Voltage 0.6 - 2.0 V Vros = VGS, ID = 250pA
bss Drain-to-Source Leakage Current : : 12000 pA VS: , 12x V: , g, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 n A N/ss = 12V
Gate-to-Source Reverse Leakage - - -200 VGS = -12V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 28 - - S Vos = 16V, ID = 9.0A
% Total Gate Charge - 21 32 lo = 9.0A
Qgs Gate-to-Source Charge - 6.7 10 nC Vros = 15V
qu Gate-to-Drain ("Miller") Charge - 5.8 8.7 N/ss = 4.5V ©
Qoss Output Gate Charge - 21 29 Vss = 0V, Vos = 15V
td(on) Turn-On Delay Time - 7.8 - VDD = 15V,
tr Rise Time - 2.5 - ns ID = 9.0A
td(off) Turn-Off Delay Time - 19 - Rs = 1.89
tf Fall Time - 4.0 - Vss = 4.5V ©
Ciss Input Capacitance - 2530 - N/ss = 0V
Cass Output Capacitance - 706 - Vos = 15V
Crss Reverse Transfer Capacitance - 46 - pF f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 223 ml
IAR Avalanche CurrentC0 - 11 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 90 integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - 0.79 1.3 V T: = 25°C, Is = 9.0A, Vss = 0V ©
- 0.65 - TJ = 125°C, ls = 9.0A, Was = 0V
trr Reverse Recovery Time - 40 60 ns TJ = 25°C, IF = 9.0A, VR= 15V
Qrr Reverse Recovery Charge - 56 84 nC di/dt = 100Alps ©
trr Reverse Recovery Time - 43 65 ns TJ = 125''C, IF = 9.0A, VR=15V
Qrr Reverse Recovery Charge - 64 96 nC di/dt = 100Alps ©
2

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