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IRF7457TRPBFIRN/a3263avai20V Single N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7457TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters with S ..
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IRF7457TRPBF
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 95032
TOR ech Ier SMPS MOSFET IRF7457PbF
Applications HEXFET© Power MOSFET
o High Frequen_cy DC-DC Isolated . . . Voss RDS(on) max ID
Converters with Synchronous Rectification
for Telecom and Industrial use 20V 7.0mQ 15A
0 High Frequency Buck Converters for
Computer Processor Power
0 Lead-Free
Benefits
0 UItra-Low RDS(on) SDI]1 D
q Very Low Gate Impedance s m2 H Eng D
. Fully Characterized Avalanche Voltage S m3 [l m: D
and Current
G EDT CED D
Top View SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 20 V
Veg Gate-to-Source Voltage 1 20 V
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 15
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 12 A
IDM Pulsed Drain CurrentC) 120
PD @TA = 25°C Maximum Power Dissipation© 2.5 W
PD @TA = 70°C Maximum Power Dissipation© 1.6 W
Linear Derating Factor 0.02 W/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Symbol Parameter Typ. Max. Units
RQJL Junction-to-Drain Lead - 20
RQJA Junction-to-Ambient co - 50 "C/W
Notes co through © are on page 8
1
10/12/04

IRF7457PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmpss Drain-to-Source Breakdown Voltage 20 - - V Ves = 0V, ID = 250pA
AV. . . - 5.5 7.0 Vss = 10V, lo =15A ©
- - - mn
RDs(on) Static Drain to Source On Resistance - 8.0 10.5 Vss = 4.5V, k, = 12A ©
Vesuh) Gate Threshold Voltage 1.0 - 3.0 V Vos = Vas, ID = 250uA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 16V, Vas = 0V
- - 100 I/cs = 16V, Vas = 0V, TJ = 125°C
kiss Gate-to-Source Forward Leakage - - 200 n A l/ss = 16V
Gate-to-Source Reverse Leakage - - -200 Vss = -16V
Dynamic tii) Tg = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 30 - - S VDS = 16V, ID = 12A
% Total Gate Charge - 28 42 ID = 12A
Qgs Gate-to-Source Charge - 11 17 no VDs = 10V
qu Gate-to-Drain ("Miller") Charge - IO 15 Vss = 4.5V, G)
Qoss Output Gate Charge - 25 38 Vas = 0V, l/rss = 10V
tam”) Turn-On Delay Time - 14 - VDD = 10V,
t, Rise Time - 16 - ns ID = 12A
td(off) Turn-Off Delay Time - 16 - Rs = 1.89
ti Fall Time - 7.5 - VGS = 4.5V ©
Ciss Input Capacitance - 3100 - Vss = 0V
Coss Output Capacitance - 1600 - Vos = 10V
Crss Reverse Transfer Capacitance - 270 - pF f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 265 mJ
IAR Avalanche CurrentCD - 15 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 5 MOSFET symbol D
(Body Diode) - _ . A showing the
ISM Pulsed Source Current 120 integral reverse G
(Body Diode) (D - - p-n junction diode. s
l/so Diode Forward Voltage - 0.8 1.3 V Tu = 25°C, Is =12A,VGs = 0V ©
- 0.67 - TJ =125°C, ls =12A,VGS = 0V
trr Reverse Recovery Time - 50 75 ns Tu = 25°C, IF = 12A, VR-- 15V
ar, Reverse Recovery Charge - 70 105 nC di/dt = 1OOA/ps ©
trr Reverse Recovery Time - 50 75 ns Tu = 125°C, IF = 12A, VR=15V
Qrr Reverse Recovery Charge -- 74 110 nC di/dt = 100A/us G)
2

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