IRF7457TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93882DIRF7457SMPS MOSFET®HEXFET Power MOSFET
IRF7457TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsl High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters with S ..
IRF7457TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsl High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters with S ..
IRF7457TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters with S ..
IRF7458 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93892CIRF7458SMPS MOSFET®HEXFET Power MOSFET
IRF7458TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsl High Frequency Isolated DC-DCV R max IDSS DS(on) D Converters with Synchronous Rect ..
ISL3092IR-TK , 11GHz VCO
ISL3092IR-TK , 11GHz VCO
ISL3092IR-TK , 11GHz VCO
ISL31498EIUZ , ±60V Fault Protected, 5V, RS-485/RS-422 Transceivers with ±25V Common Mode Range
ISL3152EIBZ , ±16.5kV ESD (IEC61000-4-2) Protected, Large Output Swing, 5V, Full Fail-Safe, 1/8 Unit Load, RS-485/RS-422 Transceivers
ISL3152EIBZ , ±16.5kV ESD (IEC61000-4-2) Protected, Large Output Swing, 5V, Full Fail-Safe, 1/8 Unit Load, RS-485/RS-422 Transceivers
IRF7457-IRF7457TR
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 93882D
International
TOR Rectifier
Applications
IRF7457
HEXFET0 Power MOSFET
SMPS MOSFET
. High Frequency DC-DC Isolated
. . . V R max I
Converters with Synchronous RectiMation DSS DS(on) D
for Telecom and Industrial use 20V 7.0mQ 15A
o High Frequency Buck Converters for
Computer Processor Power
Benefits
0 Ultra-Low RDS(on) S rrm-l D ‘
0 Very Low Gate Impedance s m2 E E1]: D
o Fully Characterized Avalanche Voltage s m3 EL‘ m: D Jfff/
and Current _
G my m: D
Top View SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vros Drain-Source Voltage 20 V
VGs Gate-to-Source Voltage i 20 V
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 15
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current0) 120
Pro @TA = 25°C Maximum Power Dissipation® 2.5 W
Pro @TA = 70°C Maximum Power Dissipation© 1.6 W
Linear Derating Factor 0.02 W/°C
T J , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead - 20
RNA Junction-to-Ambient (9 - 50 °C/W
Notes co through (D are on page 8
1
3/25/01
IRF7457
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250pA
AV
. . . - 5.5 7.0 VGS = 10V, ID = 15A ©
- - - mn
RDS(on) Static Drain to Source On Resistance 8.0 10.5 VGS = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vros = VGs, ID = 250pA
bss Drain-to-Source Leakage Current - - 20 pA Vos = 16V, VGS = 0V 0
- - 100 Vros=16V,VGs=0V,TJ= 125 C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -200 VGS = -16V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 30 - - S Vos = 16V, ID = 12A
% Total Gate Charge - 28 42 lo = 12A
095 Gate-to-Source Charge - 11 17 nC Vros = 10V
qu Gate-to-Drain ("Miller") Charge - 10 15 Vss = 4.5V, ©
Qoss Output Gate Charge - 25 38 Vss = 0V, Vos = 10V
td(on) Turn-On Delay Time - 14 - VDD = 10V,
tr Rise Time - 16 - ns ID = 12A
td(off) Turn-Off Delay Time - 16 - Rs = 1.89
tf Fall Time - 7.5 - VGS = 4.5V ©
Ciss Input Capacitance - 3100 - N/ss = 0V
Cass Output Capacitance - 1600 - Vos = 10V
Crss Reverse Transfer Capacitance - 270 - pF f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 265 ml
IAR Avalanche CurrentC0 - 15 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 5 MOSFET symbol D
(Body Diode) - - . A showing the
ISM Pulsed Source Current 120 integral reverse G
(Body Diode) C) - - p-n junction diode. s
N/so Diode Forward Voltage - 0.8 1.3 V T: = 25''C, ls = 12A, Vss = 0V ©
- 0.67 - TJ = 125°C, ls = 12A, VGS = 0V
trr Reverse Recovery Time - 50 75 ns TJ = 25°C, IF = 12A, VR= 15V
Qrr Reverse Recovery Charge - 70 105 nC di/dt = 100A/ps ©
trr Reverse Recovery Time - 50 75 ns TJ = 125°C, IF = 12A, VR=15V
Qrr Reverse Recovery Charge - 74 110 nC di/dt = 100A/ps ©
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