IRF7452 ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters 100V 0.060Ω 4.5ABenefits Low Ga ..
IRF7452 ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93897CIRF7452SMPS MOSFET®HEXFET Power MOSFET
IRF7452PBF , HEXFET Power MOSFET
IRF7452QTRPBF ,100V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 packageapplications. This surface mount SO-8can dramatically reduce board space and is alsoavailable in ..
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IRF7452TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications Voss RDS(on) max ID
. High frequency DC-DC 100V 0.060Q 4.5A
Benefits
. Low Gate ..
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IRF7452
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier SMPS MOSFET
PD- 93897C
Applications
. High frequency DC-DC converters
IRF7452
HEXFET© Power MOSFET
Voss RDS(on) max ID
100V 0.0600 4.5A
Benefits
0 Low Gate to Drain Charge to Reduce
Switching Losses
0 Fully Characterized Capacitance Including
Effective Cogs to Simplify Design, (See
71130 fl
53]: D
App. Note AN1001)
. Fully Characterized Avalanche Voltage 333 D
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 4.5
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.6 A
IDM Pulsed Drain Current co 36
Po @TA = 25''C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
Vss Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies
0 Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input
with Passive Reset Forward Converter Primary
Notes (O through © are on page 8
1
11/23/01
IRF7452
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGs = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.11 - V/°C Reference to 25°C, ID = 1mA ©
Rrosom Static Drain-to-Source On-Resistance - - 0.060 n VGS = 10V, ID = 2.7A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V Ws = VGs, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA Ws = 100V, VGS = 0V
- - 250 I/re = 80V, VGs = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 24V
Gate-to-Source Reverse Leakage - - -100 VGS = -24V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ge Forward Transconductance 3.4 - - S Vos = 50V, ID = 2.7A
% Total Gate Charge - 33 50 ID = 2.7A
Qgs Gate-to-Source Charge - 7.3 11 nC I/os = 80V
di Gate-to-Drain ("Miller") Charge - 16 24 V93 = 10V, co
td(on) Turn-On Delay Time - 9.5 - l/oo = 50V
tr Rise Time - 11 - ns lo = 2.7A
tam) Turn-Off Delay Time - 16 - Rs = 6.09
tf Fall Time - 13 - VGS = 10V ©
Ciss Input Capacitance - 930 - l/ss = 0V
Cass Output Capacitance - 300 - VDs = 25V
Crss Reverse Transfer Capacitance - 84 - pF f = 1.0MHz
Coss Output Capacitance - 1370 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 170 - VGS = 0V, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 280 - VGS = 0V, VDs = 0V to 80V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 200 m]
IAR Avalanche CurrentC) - 4.5 A
EAR Repetitive Avalanche Energy0) - 0.25 mJ
Thermal Resistance
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient© - 50 °C/W
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 36 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 2.7A, Veg = 0V ©
trr Reverse Recovery Time - 77 120 ns To = 25°C, IF = 2.7A
Qrr Reverse RecoveryCharge - 270 410 nC di/dt = 100Alps ©
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