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IRF7433IRN/a26avai-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package


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IRF7433
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
PD -94056
International
TOR Rectifier IRF7433
HEXFET© Power MOSFET
Ultra Low On-Resistance VDss Rosmn) max In
P-Channel MOSFET M2V 24mf2@Vss = -4.51/ _8.7A
Surface Mount -
Available in Tape & Reel 30mf2@Vss - -2.51/ “A
46mQ@VGs = -1.8V -6.3A
Description
These P-Channel MOSFETs from International SE31 83330
Rectifier utilize advanced processing techniques to s D312 7 D
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an s LIL]
extremely efficient device for use in battery and load 4
management applications.. G DE CED
The SO-8 has been modified through a customized Top View SO-8
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. 1/Mththese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-Source Voltage -12 V
In @ TA = 25°C Continuous Drain Current, Vss @ -4.5V -8.9
In @ TA = 70°C Continuous Drain Current, l/ss @ -4.5V -7.1 A
IDM Pulsed Drain CurrentCD -36
Pro @TA = 25°C Maximum Power Dissipation© 2.5 W
PD @TA = 70°C Maximum Power Dissipation© 1.6 W
Linear Derating Factor 0.02 Wl°C
VGs Gate-to-Source Voltage t8 V
T J , TSTG Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient) 50 °C/W
1
12/15/00

IRF7433 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V VGS = 0V, ID = -250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.007 - V/°C Reference to 25°C, ID = -1mA
Rosa” Static Drain-to-Source On-Resistance - - 24 VGS = -4.5V, ID = -8.7A ©
- - 30 mn VGs = -2.5V, ID = -7.4A ©
- - 46 VCs = -1.8V, ID = -6.3A ©
VGS(th) Gate Threshold Voltage -0.4 - -0.9 V Vos = Was, ID = -250PA
Ts Forward Transconductance 22 - - S Vos = -10V, ID = -8.7A
loss Drain-to-Source Leakage Current - - -1.0 y A Vos = -9.6V, VGS = 0V
- - -25 Vos = -9.6V, VGS = 0V, To = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -8V
Gate-to-Source Reverse Leakage - - 100 VGs = 8V
Qg Total Gate Charge - 20 - ID = -8.7A
Qgs Gate-to-Source Charge - 4.5 - nC Vos = -6V
di Gate-to-Drain ("Miller") Charge - 4.0 - VGS = -4.51/ ©
td(on) Turn-On Delay Time - 8.8 13 ns VDD = -6V, VGS = -4.5V
tr Rise Time - 8.2 12 ID = -1.0A
taott) Turn-Off Delay Time - 272 408 Ro = 69
tf Fall Time - 175 263 Rs = 69 ©
Ciss Input Capacitance - 1877 - VGS = 0V
Coss Output Capacitance - 512 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 310 - I = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -36 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.5A, VGs = 0V ©
trr Reverse Recovery Time - 36 54 ns To = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge - 28 42 nC di/dt = -1OOA/ps ©
Notes:
co Repetitive rating; pulse width limited by (3 When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
© Pulse width I 400ps; duty cycle 3 2%.
2

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