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IRF7421D1IRN/a4835avai30V FETKY
IRF7421D1TRIRN/a15988avai30V FETKY


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IRF7421D1-IRF7421D1TR
30V FETKY
International PD-91411D
TOR Rectifier IRF7421D1
FETKW"MOSFET / Schottky Diode
Co-packaged HEXFET© Power
MOSFET and Schottky Diode
Ideal For Synchronous Regulator
Applications
Generation V Technology
SO-8 Footprint
VDSS = 30V
RDS(on) = 0.035Q
Schottky Vf = 0.39V
Top View
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely Iowon-resistance persilicon area. Combining
this technology with International Rectiher's low forward drop Schottky
rectifers results in an extremely efhcient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS@10V@ 5.8 A
ID @ TA = 70°C 4.6
IDM Pulsed Drain Current T 46
Pro @TA = 25°C Power Dissipation (ii) 2.0 W
Pro @TA = 70°C 1.3
Linear Derating Factor 16 W/°C
VGs Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt C2) -5.0 V/ns
TJ TSTG Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance Ratings
Parameter Maximum Units
Ras l Junction-to-Ambient (ii) 62.5 ''C/W
Notes:
T, Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
® ISD I 4.1A,di/dtS110A/ps,Vis: V(BR)DSS: Tu £15000
C:3) Pulse width S 300ps; duty cycle S 2%
(CT) Surface mounted on FR-4 board, ts 10sec.
1
10/18/04

IRF7421D1
International
TOR Rectifier
MOSFET Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250uA
Rosom Static Drain-to-Source On-Resistance - 0.026 0.035 g VGs = 10V, b = 4.1A ©
- 0.040 0.060 VGS = 4.5V, ID = 2.1A ©
Vegan) Gate Threshold Voltage 1.0 - - V Vros = VGs, ID = 250pA
git Forward Transconductance 4.6 - - S VDS = 15V, ID = 2.1A
bss Drain-to-Source Leakage Current - - 1.0 Vos = 24V, Ves = 0V
- - 25 PA Vos = 24V, sz = 0v, To = 125°C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -20V
Gate-to-Source Reverse Leakage - - 100 Vss = 20V
09 Total Gate Charge - 18 27 ID = 4.1A
Qgs Gate-to-Source Charge - 2.2 3.3 nC VDS = 24V
di Gate-to-Drain ("Miller") Charge - 5.9 8.9 VGS = 10V (see Figure 10) ©
tarm) Turn-On Delay Time - 6.7 - VDD = 15V
tr Rise Time - 27 - ns ID = 4.1A
tum) Turn-Off Delay Time - 20 - Rs = 6.29
if Fall Time - 16 - RD = 3.79 ©
Ciss Input Capacitance - 510 - Vss = 0V
Coss Output Capacitance - 200 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 84 - f = 1.0MHz (see fgure 9)
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current (Body Diode) - - 3.1 A
ISM Pulsed Source Current (Body Diode) - - 33
V59 Body Diode Forward Voltage - - 1.0 V Tu = 25°C, IS = 4.1A, VGS = 0V
trr Reverse Recovery Time (Body Diode) - 57 86 ns Tu = 25°C, IF = 4.1A
Qrr Reverse Recovery Charge - 93 140 nC di/dt = 100A/ps©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
lam Max. Average Forward Current 1.7 A 50% Duty Cycle. Rectangular Wave, TA = 25°C
1.2 TA = 70°C
ISM Max. peak one cycle Non-repetitive 120 5ps sine or 3ps Rect. pulse Following any rated
Surge current 11 A 10ms sine or 6ms Rect. pulse load condition &
with lu,, applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.50 b = 1.0A, T: = 25''C
0.62 IF = 2.0A, T: = 25°C
0.39 V IF = 1.0A, T: = 125°C
0.57 IF=2.0A,TJ=125°C .
IRM Max. Reverse Leakage current 0.06 mA VR = 30V T: = 25''C
16 T: = 125°C
Q Max. Junction Capacitance 110 pF ( = 5Vdc ( 100kHz to 1 MHz) 25''C
dv/dt Max. Voltage Rate of Charge 3600 V/ us Rated VR
2

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