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IRF7420IRN/a55avai-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
IRF7420TRIORN/a1858avai-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package


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IRF7420-IRF7420TR
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94278A
International
TOR Rectifier IRF7420
HEXFETID Power MOSFET
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
VDss RDS(on) max lD
-12V 14mQ@VGs = -4.5v -11.5A
17.5mQ@Vss = -2.5v -9.8A
26mQ@Vss = -1.8V -8.1A
Description
These P-Channel HEXFET*) Power MOSFETs from s m1 ' a D
International Rectifier utilize advanced processing CTE
techniquesto achieve the extremely Iowon-resistance s Lu} H 'u, D
per silicon area. This benefit provides the designer 3 ill 6
with an extremely efficient device for use in battery s CIE] E D
and load management applications.. G D314 In, D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and Top View SO-8
multiple-die capability making it ideal in a variety of
powerapplications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, l/ss @ -4.5V -11.5
ID @ TA-- 70°C Continuous Drain Current, Ves @ -4.5V -9.2 A
IDM Pulsed Drain Current co -46
PD @TA = 25°C Power Dissipation © 2.5 W
Po @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 20 mW/°C
Vss Gate-to-Source Voltage t-8 V
To, TSTG Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 50 "C/W
1
8/2/06

IRF7420
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V Ves = 0V, ID = -250pA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient - 0.007 - V/°C Reference to 25°C, ID = -1mA
RDSW) Static Drain-to-Source On-Resistance - - 14 I/ss = M.5V, ID = -11.5A ©
- - 17.5 rnf2 Vss = -2.5V, ID = -9.8A ©
- - 26 Vss = -1.8V, ID = -8.1A ©
VGS(1h) Gate Threshold Voltage -0.4 - -O.9 V Vos = Vss, ID = -250pA
gfs Forward Transconductance 32 - - S Vos = -1OV, ID = -11.5A
loss Drain-to-Source Leakage Current - - -1.0 PA VDS = -9.6V, Vas = 0V
- - -25 VDS = -9.6V, Vas = OV, To = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -8V
Gate-to-Source Reverse Leakage - - 100 Vas = 8V
% Total Gate Charge - 38 - ID = -11.5A
Qgs Gate-to-Source Charge - 8.1 - nC Vos = -6V
di Gate-to-Drain ("Miller") Charge - 8.7 - Vss = -4.5V ©
td(on) Turn-On Delay Time - 8.8 13 ns VDD = -6V, Vas = -4.5V
tr Rise Time - 8.8 13 ID = -1.0A
tam) Turn-Off Delay Time - 291 437 RD = 69
tt Fall Time - 225 338 Ra = 69 ©
Ciss Input Capacitance - 3529 - Vas = 0V
Coss Output Capacitance - 1013 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 656 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 A showing the
ISM Pulsed Source Current _ - - 4 6 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -2.5A, VGS = 0V ©
tn Reverse Recovery Time - 62 93 ns Tu = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge - 61 92 pC di/dt = -1OOA/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
C) Pulse width s 400ps; duty cycle s 2%.

Cs) Surface mounted on 1 in square Cu board, t s 10sec.

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