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IRF7380TRPBFIORN/a16000avai80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7380TRPBF ,80V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsDSS DS(on) D High frequency DC-DC converters73m

IRF7380TRPBF
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
ISER liectifier |RF7380PbF
HEXFETO Power MOSFET
Applications Voss R0303“) max ID
o High frequency DC-DC converters -
. Lead-Free 8011 73mg2@Vas - 10V 3.6A
Benefits 1
a Low Gate to Drain Charge to Reduce SI EH DE DI
Switching Losses e10; LIL] D1
0 Fully Characterized Capacitance Including S2 mf-
Effective Coss to Simplify Design, (See
App. Note AN1001) -
q Fully Characterized Avalanche Voltage Top View SO-8
and Current
G2 EEL E11] D2
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 80 V
I/ss Gate-to-Source Voltage * 20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 3.6
ID @ TA = 100°C Continuous Drain Current, Vss @ 10V 2.9 A
d, Pulsed Drain Current OD 29
PD @TA = 25°C Maximum Power Dissipation 2.0 W
Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt © 2.3 V/ns
To Operating Junction and -55 to + 150 (
Tsms Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 42 °C/W
ROJA Junction-to-Ambient (PCB Mount) (0 -- 62.5
Notes co through (E are on page 8
il © 2013 International Rectifier September 16, 2013

|RF7380F’bF
Static © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 - -- V Vss = 0V, b = 250PA
AV(BR)DS,S/ATJ Breakdown Voltage Temp. Coefficient - 0.09 - VPC Reference to 25°C, b = 1mA
Rrosom Static Drain-to-Source On-Resistance - 61 73 mn Vas = 10V, ID = 2.2A ©
Vssmm Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 250pA
|DSS Drain-to-Source Leakage Current - - 20 uA Vos = 80V, Vss = 0V
-- -- 250 Vos = 64V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
Dynamic tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gig Forward Transconductance 4.3 - - S Vos = 25V, ID = 2.2A
Qg Total Gate Charge - 15 23 ID = 2.2A
31g Gate-to-Source Charge - 2.9 - nC Vos = 40V
Qud Gate-to-Drain ("Miller") Charge - 4.5 - Ves =1OV ©
tom) Turn-On Delay Time - 9.0 -- Vor) = 40V
t Rise Time - 10 - ID = 2.2A
tdmm Turn-Off Delay Time - 41 - ns RG = 249
ti Fall Time - 17 - Vss =10V ©
Ciss Input Capacitance -- 660 -- I/ss = 0V
Coss Output Capacitance - 110 - Vos = 25V
Crss Reverse Transfer Capacitance - 15 - pF f = 1 .OMHz
Coss Output Capacitance - 710 - Vas = 0V, Vos =1.0V, f =1.0MHz
Coss Output Capacitance - 72 - Vss = 0V, Vos = 64V, f = 1 .OMHz
CoSS eff. Effective Output Capacitance -- 140 -- I/ss = 0V, Vos = 0V to 64V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy (PC) - 75 mJ
lar, Avalanche Current C) - 2.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current - -- 3.6 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 29 A integral reverse G
(Body Diode) (D p-n junction diode. S
vSD Diode Forward Voltage - - 1.3 v T J = 25°C, IS = 2.2A, l/ss = OV ©
trr Reverse Recovery Time - 50 - ns To = 25°C, IF = 2.2A, Va, = 40V
q, Reverse Recovery Charge -- 110 -- nC di/dt= 100A/ps ©
© 2013 International Rectifier

Spetember 16, 2013
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