IRF7380 ,80V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 94420IRF7380®HEXFET Power MOSFETV R max I
IRF7380QTRPBF ,80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package HEXFET Power MOSFET V R max ..
IRF7380QTRPBF ,80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package HEXFET Power MOSFET V R max ..
IRF7380TRPBF ,80V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsDSS DS(on) D High frequency DC-DC converters73m
IRF7380
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94420
International
TOR Rectifier IRF7380
HEXFET® Power MOSFET
Applications Voss RDs(on) max Ir,
q High frequency DC-DC converters
80V 73mQ@VGS=10V 3.6A
Benefits 1 a
q Low Gate to Drain Charge to Reduce SI LLLH , J” DI
Switching Losses G1 $2 D UM DI
0 Fully Characterized Capacitance Including S2 ms 6333 D2
Effective Coss to Simplify Design, (See G2 E4 l ' SE D2
App. Note AN1001)
q Fully Characterized Avalanche Voltage Top View SO-8
and Current
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 80 V
Vas Gate-to-Source Voltage , 20
ID © TA = 25°C Continuous Drain Current, Vss @ 10V 3.6©
lo @ TA = 100°C Continuous Drain Current, Vss @ 10V 2.9 A
IDM Pulsed Drain Current OD 29
PD @TA = 25°C Maximum Power Dissipation 2.0 W
Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt © 2.3 V/ns
Tu Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ReJL Junction-to-Drain Lead - 20 °C/W
ReJA Junction-to-Ambient (PCB Mount) * - 50
Notes C) through © are on page 8
1
08/28/02
IRF7380
International
TOR Rectifier
Static tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 .-.- -- V Vss = 0V, ID = 250pA
AV(BH)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.09 - V/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 61 73 mn Vss = 10V, ID = 2.2A (9
Vesoh) Gate Threshold Voltage 2.0 - 4.0 v Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA I/os = 80V, I/ss = 0V
- - 250 Vos = 64V, Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 4.3 -- - S Vos = 25V, ID = 2.2A
ch Total Gate Charge - 15 23 ID = 2.2A
Qgs Gate-to-Source Charge - 2.9 - nC Vos = 40V
di Gate-to-Drain ("Miller") Charge - 4.5 - Vss = 10V (9
td(on) Turn-On Delay Time - 9.0 - VDD = 40V
t, Rise Time - IO - ID = 2.2A
tam") Turn-Off Delay Time -- 41 -- ns Rs = 249
t, Fall Time - 17 - Ves =1OV ©
Ciss Input Capacitance - 660 - Vss = 0V
Coss Output Capacitance -- 110 - Vos = 25V
Crss Reverse Transfer Capacitance - 15 - pF f = 1.0MHz
Cass Output Capacitance - 710 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance -- 72 -- Vss = 0V, Vos = 64V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 140 - VGS = 0V, Vos = 0V to 64V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy©© _ 75 mJ
I AR Avalanche Current (O _ 2.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 3.6 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 29 A integral reverse G
(Body Diode) C)6) p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 2.2A, VGS = 0V ©
trr Reverse Recovery Time - 50 __- ns TJ = 25°C, IF = 2.2A, Vor, = 40V
G, Reverse Recovery Charge - 110 - nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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