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IRF7353D1IRN/a1610avai30V FETKY
IRF7353D1TRIORN/a11500avai30V FETKY


IRF7353D1TR ,30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7353D1TRPBF ,30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7353D1TRPBF ,30V FETKYapplications.SO-8The SO-8 has been modified through a customized leadframe forenhanced thermal char ..
IRF7353D2 ,30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7353D2TRPBF ,30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7353D2TRPBF ,30V FETKYapplications.SO-8The SO-8 has been modified through a customized leadframe for enhancedthermal char ..
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IRF7353D1-IRF7353D1TR
30V FETKY
International PD- 91802C
TOR Rectifier IRF7353D1
FETKW"MOSFET / Schottky Diode
o Co-packaged HEXFET6 Power MOSFET 1
and Schottky Diode A C,C,'r"rs7'," 8133 K VDSS = 30V
o Ideal For Buck RegulatorApplications A m2 4:]: K
o N-Channel HEXFET 3 6 Ros = 0.0299
o Low vF Schottky Rectifier S D: ILL) D (on)
o Generation 5 Technology G 514 5113 D Schottky Vf = 0.39V
o SO-8 Footprint .
Description Top View
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier‘s low forward drop Schottky rectifers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current 6.5 A
ID @ TA = 70°C 5.2
IDM Pulsed Drain Current 0) 52
Pro @TA = 25°C Power Dissipation 2.0 W
Po @TA = 70°C 1.3
Linear Derating Factor 16 mW/°C
VGs Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery dv/dt Ct) -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance Ratings
Parameter Maximum Units
ReJA l Junction-to-Ambient (5) 62.5 ''C/W
Notes:
C) Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
© Starting TJ = 25°C, L =10mH,RG = 259. IAS = 4.0A
© Iso s 4.0A, di/dt s 74A/ps, V00 3 V(BR)DSSv Trs 150°C
© Surface mounted on FR-4 board, ts 10sec.
1
10/20/04

IRF7353D1
International
TOR Rectifier
MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V N/ss = 0V, ID = 250pA
Roswn) Static Drain-to-Source On-Resistance - 0.023 0.032 Q Vss = 10V, ID = 5.8A
- 0.032 0.046 VGS = 4.5V, ID = 4.7A
Vesoh) Gate Threshold Voltage 1.0 - - V Vos = VGs, ID = 250pA
gts Forward Transconductance - 14 - S Vos = 24V, ID = 5.8A
IDSS Drain-to-Source Leakage Current - - 1.0 Vos = 24V, VGS = 0V
- - 25 pA Vos = 24V, VGS = 0v, To = 55°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 N/ss = -20V
09 Total Gate Charge - 22 33 ID = 5.8A
Qgs Gate-to-Source Charge - 2.6 3.9 nC Vros = 24V
di Gate-to-Drain ("Miller") Charge - 6.4 9.6 VGS = 10V (see Ftgure 8)
td(on) Turn-On Delay Time - 8.1 12 VDD = 15V
tr Rise Time - 8.9 13 ns ID = 1.0A
tam) Turn-Off Delay Time - 26 39 Rs = 6.09
tf Fall Time - 17 26 RD = 159
Ciss Input Capacitance - 650 - N/ss = 0V
Coss Output Capacitance - 320 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz (see figure 7)
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current (Body Diode - - 2.5 A
ISM Pulsed Source Current (Body Diode) - - 30
V59 Body Diode Forward Voltage - 0.78 1.0 V TJ = 25°C, Is = 1.7A, VGS = 0V
trr Reverse Recovery Time (Body Diode) - 45 68 ns TJ = 25°C, IF = 1.7A
Qrr Reverse Recovery Charge - 58 87 n0 di/dt = 100A/ps ©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
lam) Max. Average Forward Current 2.7 A 50% Duty Cycle. Rectangular Wave, TA = 25°C
1.9 See Fig. 14 TA = 70°C
ISM Max. peak one cycle Non-repetitive 120 5ps sine or 3ps Rect. pulse Following any rated
Surge current 11 A 10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 V IF = 2.0A, TJ = 25°C
0.39 IF = 1.0A, TJ = 125°C
0.57 IF = 2.0A, Tu =125''C.
IRM Max. Reverse Leakage current 0.06 m A VR = 30V T, = 25°C
16 T, = 125°C
C. Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ us Rated VR
2

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