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IRF7335D1IORN/a8000avai30V FETKY
IRF7335D1IOR ?N/a137avai30V FETKY
IRF7335D1IRN/a70avai30V FETKY
IRF7335D1TRIORN/a3336avai30V FETKY
IRF7335D1TRIRN/a185200avai30V FETKY


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IRF7335D1-IRF7335D1TR
30V FETKY
PD- 94546
IRF7335D1
Dual FETKYTM
Co-Packaged Dual MOSFET Plus Schottky Diode
International
TOR Rectifier
. Co-Pack Dual N-channel HEXFETE Power MOSFET
and Schottky Diode
. Ideal for Synchronous Buck DC-DC
Converters Up to 11A Peak Output
. Low Conduction Losses
. Low Switching Losses Device Ratings (Typ.Va|ues)
. Low Vt Schottky Rectmer Q1 Q2
and Schottky
_ D1 I 14 $1,132
' D1 'ea, .711 13 $1.02 RDS(on) 13.4 mf2 9.6 mg
92% 61E It 12 $1.02 Q6 13 NC 18nC
Jr; ir'ys-, _ A 92$ 11 S1,D2
. s/Cie",' 32E (i-it 5] SI,D2 st 5.5 no 6.4 no
S2 ti) Q2 E S102 V 1.0V 0.43V
S2 i: E 51.02 SD
Description
The FETKW" family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and power management applications. Advanced
HEXFET®MOSFETS combined with low forward drop Schottky results in an extremely efficient device suitable
for a wide variety of portable electronics applications.
The SO-14 has been modified through a customized leadframe for enhanced thermal characteristics and
multiple die capability making it ideal in a variety of power applications. l/Wh these improvements multiple
devices can be used in an application with dramatically reduced board space. Internal connections enable
easier board layout design with reduced stray inductance.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-Source Voltage 30 V
ID @ TA = 25''C Continuous Drain Current, VGS @ ION/CO 10
ID @ TA = 70''C Continuous Drain Current, VGS @ ION/OD 8.1 A
IDM Pulsed Drain Current O) 81
PD @TA = 25°C Power Dissipation © 2.0 W
PD @TA = 70°C Power Dissipation© 1.3
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage i 12 V
EAS (6 sigma) Single Pulse Avalanche Energy © 50 mJ
TJ Operating Junction and -55 to + 150
TsTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead 20
ReJA Junction-to-Ambient G) 62.5 °C/W
Notes co through s are on page 12

9/11/02
IRF7335D1 International
IDR Rectifier
. . _ Q1-Control FET Q2-Synch FET
Electrical Characteristics & Schottky
Parameter Min Typ Max Min Typ Max Units Conditions
Drain-to-Source BVDSS 30 30 V l/ss = 0V, ID = 250pA
Breakdown Voltage
Breakdown Voltage AvaATJ 0.025 0.033 V Reference to 25°C, ID = 1.0mA
Tem. Coemcient
Static Drain-Source RDSW) 13.4 17.5 9.6 12.8 mn VGS = 4.5V, ID = 10A©
on Resistance
Gate Threshold Voltage VGSM 1.0 1.1 V VDS = VGSJD = 250pA
Drain-Source Leakage loss 30 30 pA Vos = 24V, VGS = 0
Current .
0.3 10 mA VDS = 24V, I/ss = 0, T] = 125°C
Gate-Source Leakage Isss i100 1100 nA VGs = t121/
Current
Forward Transconductance gFS 21 28 S VGS=5V, |D=8.0A, VDS=15V
Total Gate Charge QG 13 20 18 27 VGS=4.5V, ID=8.0A, VDS=15V
Pre-Vth Qss, 3.2 5.8
Gate-Source Charge
Post-Vth Qss, 1 .4 1.5 nC
Gate-Source Charge
Gate to Drain Charge %, 4.1 4.9
Switch Chg(Q952 + di) st 5.5 6.4
Output Charge 0055 7.7 11 nC VDs = 16V, VGS = 0
Gate Resistance Rs 4.3 10 2.6 5.0 Q
Turn-on Delay Time tum“) 6.8 8.8 Va, = 16V, r, = 8.0A
Rise Time t, 5.9 3.3 ns VGs = 4.5V
Turn-oft Delay Time t, (om 19 17 Clamped Inductive Load
Fall Time t, 9.1 7.0
Input Capacitance Ciss 1500 2300
Output Capacitance cu, 310 450 pF VDS = 15V, VGS = 0
Reverse Transfer Capacitance Cm, 140 180
Source-Drain Rating & Characteristics
Parameter Min Typ Max Min Typ Max Units Conditions
Continuous Source Current Is 10 10 A MOSFET symbol D
(Body Diode) showing the
Pulse Source Current Is,, 81 81 intergral reverse
(Body Diode) p-n junction diode s
Diode Forward Voltage VSD 1 1.25 0.43 0.50 V T, = 25°C, IS = 1.0A,VGS= 0V
Reverse Recovery Time trr 28 31 ns T, = 125°C, l, = 8.0A, VR-- 15V
Reverse Recovery Charge q, 24 26 nC di/dt = 100/Ups
Reverse Recovery Time t, 29 31 ns T, = 125°C, l, =8.0A, v,,-- 15V
Reverse Recovery Charge q, 26 26 nC di/dt =100A/ps
2

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