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IRF7331PBFIRN/a50avaiHEXFET Power MOSFET


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IRF7331PBF
HEXFET Power MOSFET
PD - 95266
International
TOR Rectifier IRF7331PbF
HEXFET*) Power MOSFET
0 Ultra Low On-Resistance Voss RDS(on) max (mg) ID
0 Surface Mount .
. . 45 V = 2.5V 5.6A
0 Available In Tape & Reel @ GS
0 Lead-Free
Description 1 8
These N-Channel HEXFETE power MOSFETs from SI LP l -LLDI
International Rectifier utilize advanced processing 613122 7333 D1
techniques to achieve the extremelylow on-resistance S2 nrf- 6:13 D2
per silicon area. This benefit provides the designer l I
with an extremely eelcient device for use in battery G2 IE“ 5:13 D2
and load management applications.
Top View SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. VWththese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 7.0
ID @ TA-- 70°C Continuous Drain Current, I/ss @ 4.5V 5.5 A
Irv, Pulsed Drain Current OD 28
PD @TA = 25°C Power Dissipation © 2.0 W
Pro @TA = 70°C Power Dissipation@ 1.3
Linear Derating Factor 16 mW/°C
Ves Gate-to-Source Voltage i 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJL Junction-to-Drain Lead - 20
RNA Junction-to-Ambient © - 62.5 'C/W
1
05/18/04
IRF7331PbF International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250PA
AV
DSSIATJ Breakdown Voltage Temp. Coemcient - 0.013 - Vl°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance _- -_- :2 mg V2: : 'li'") :: : 2t g
VGS(th) Gate Threshold Voltage 0.6 - 1.2 V Vos = VGS, ID = 250pA
9ts Forward Transconductance 14 - - S Ws = 10V, ID = 7.0A
loss Drain-to-Source Leakage Current - - 1.0 pA Ws = 16V, l/ss = 0V 0
- - 25 Vros = 16V, VGS = 0V, T: = 70 C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 12V
Gate-to-Source Reverse Leakage - -- -100 I/cs = -12V
% Total Gate Charge - 13 20 ID = 7.0A
Qgs Gate-to-Source Charge - 3.7 - nC Vos = 10V
di Gate-to-Drain ("Miller") Charge - 2.1 - VGS = 4.5V
tum) Turn-On Delay Time - 7.6 - VDD = 10V ©
t, Rise Time - 22 - ns ID = 1.0A
tum“) Turn-Off Delay Time - 110 - Rs = 539
tf Fall Time - 50 - l/ss = 4.5V
Ciss Input Capacitance - 1340 - VGS = 0V
Coss Output Capacitance - 170 - pF Vos = 16V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.0 showing the
ISM Pulsed Source Current - - 28 integral reverse G
(Body Diode) CD p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V Tu = 25°C, IS = 2.0A, VGS = 0V ©
trr Reverse Recovery Time - 31 47 ns Tu = 25''C, IF = 2.0A
Qrr Reverse Recovery Charge - 15 23 n0 di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by © Surface mounted on 1 in square Cu board
max. junction temperature.
© Pulse width S 400ps; duty cycle 3 2%.
2
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