IC Phoenix
 
Home ›  II26 > IRF7328TRPBF,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
IRF7328TRPBF Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF7328TRPBFIRN/a2800avai-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package


IRF7328TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 95196AIRF7328PbF®HEXFET Power MOSFET

IRF7328TRPBF
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
o Trench Technology
0 Ultra Low On-Resistance
. Dual P-Channel MOSFET
.Available in Tape & Reel
95196A
llRF7328PbF
HEXFET6 Power MOSFET
Voss RDS(on) max ID
-30V 21 mQ@VGS = -10V -8.0A
32mf2@Vss = -4.5V -6.8A
. Lead-Free
Description
New trench HEXFETO Power MOSFETs from S113]:L aED: D1
International Rectifier utilize advanced processing 2 l 7
techniques to achieve extremely low on-resistance G1 DI Em D1
per silicon area. This benefit, combined with the S2 EL 5m: D2
ruggedized device design that HEXFET power l
MOSFETs are well known for, provides the designer G2 514 5533 D2
with an extremely efficient and reliable device for use SO-8
in battery and load management applications. Top View
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-Source Voltage -30 V
In @ TA = 25°C Continuous Drain Current, Vas @ -10V -8.0
In @ TA = 70°C Continuous Drain Current, Vas @ -10V -6.4 A
IDM Pulsed Drain Currenk0 -32
PD @TA = 25°C Maximum Power Dissipation© 2.0 W
PD @TA = 70°C Maximum Power Dissipation© 1.3 W
Linear Derating Factor 16 mW/°C
Vas Gate-to-Source Voltage t 20 V
TJ , Tsms Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient (3 62.5 °C/W
1
12/03/10

IRF7328PbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 -- -- V VGs = 0V, ID = -250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.018 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - 17 21 mn VGS = -10V, ID = -8.0A ©
- 26.8 32 l/ss = -4.5V, ID = -6.8A ©
VGS(th) Gate Threshold Voltage -1.0 - -2.5 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 12 - - S Vos = -10V, ID = -8.0A
loss Drain-to-Source Leakage Current - - -15 pA l/rss = -24V, Vss = 0V
- - -25 V93 = -24V, l/ss = 0V, Tu = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -20V
Gate-to-Source Reverse Leakage - - 100 Vas = 20V
Qg Total Gate Charge - 52 78 ID = -8.0A
QgS Gate-to-Source Charge - 9.8 - nC I/cs = -15V
di Gate-to-Drain ("Miller") Charge - 8.3 - l/ss = -10V
tdmn) Turn-On Delay Time - 13 20 VDD = -15V, VGS = -10.0V
t, Rise Time - 15 23 ns ID = -1.0A
1d(off) Turn-Off Delay Time - 198 297 Rs = 6.on
tf Fall Time - 98 147 RD = 159 C)
Ciss Input Capacitance - 2675 - Vas = 0V
Coss Output Capacitance - 409 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 262 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -32 p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -2.0A, VGS = 0V ©
trr Reverse Recovery Time - 37 56 ns To = 25°C, IF = -2.0A
0,, Reverse Recovery Charge - 36 54 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.

© Surface mounted on FR-4 board, t S 10sec.

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED