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IRF7326D2TRPBFIRN/a3850avai-30V FETKY
IRF7326D2TRPBFIRFN/a11500avai-30V FETKY


IRF7326D2TRPBF ,-30V FETKYElectrical Characteristics @ Tu = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Uni ..
IRF7326D2TRPBF ,-30V FETKYapplications. The 80-8 has been modified through a customized leadframe for enhanced thermal ch ..
IRF7328 ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD -94000IRF7328®HEXFET Power MOSFET● Trench TechnologyV R max IDSS DS(on) D● Ultra Low On-Resist ..
IRF7328TR ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD -94000IRF7328®HEXFET Power MOSFET● Trench TechnologyV R max IDSS DS(on) D● Ultra Low On-Resist ..
IRF7328TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 95196AIRF7328PbF®HEXFET Power MOSFET

IRF7326D2TRPBF
-30V FETKY
International
PD - 95311
Tart, Rectifier IRF7326D2PbF
FETKY"' MOSFET/ Schottky Diode
Co-packaged HEXFET© Power MOSFET
and Schottky Diode A
Ideal For Buck Regulator Applications A
P-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
L,)'-,,']
Top View
1 51ij Voss = -30V
- 53330 RDS(on)= 0.109
1iiiiflf,C),)
Schottky Vf = 0.52V
Lead-Free
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID © TA = 25''C Continuous Drain Current @ -3.6 A
ID © TA = 70°C -2.9
IDM Pulsed Drain Current C) -29
PD tpr, = 25''C Power Dissipation co 2.0 W
PD @TA = 70°C 1.3
Linear Derating Factor 16 mWf'C
Veg Gate-to-Source Voltage , 20 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu, Tsrs Junction and Storage Temperature Range -55 to +150 "C
Thermal Resistance Ratings
Parameter Maximum Units
ReJA l Junction-to-Ambient Cr) 62.5 ''C/W
Notes:
G) Repetitive rating: pulse width limited by maximum junction temperature (see figure 9)
Q) ISD S -1.8A, di/dt S -90/Ups, VDD S 1/iavoss, TJ I 150°C
C) Pulse width I 300ps,' duty cycle I 2%
E) Surface mounted on FR-4 board, t s 10sec.
1
10/13/04

IRF7326D2PbF International
TOR Rectifier
MOSFET Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Wsvss Drain-to-Source Breakdown Voltage -30 - - V Vss = ov, ID = -250PA
RDS(0n) Static Drain-to-Source On-Resistance - 0.073 0.10 n I/ss = -10V. ID = -1.8A ©
- 0.13 0.16 Vss=-4.51/, ID =-1.5A©
Vegan) Gate Threshold Voltage -1.0 - - V l/re = Veg. ID = -250pA
ge, Forward Transconductan ce 2.5 - - S N/ce = -24V, ID = -1.8A
logs Drain-to-Source Leakage Current - - -1.0 p A Ws = -24V, l/ss = 0V
- - -25 V03 = -24V, Vss = ov, To = 55°C
legs Gate-to-Source Forward Leakage - - 100 nA Veg = -20V
Gate-to-Source Reverse Leakage - - -100 Vss = 20V
q, Total Gate Charge - - 25 ID = -1.8A
Qgg Gate-to-Source Charge - - 2.9 nC VDS = -24V
di Gate-to-Drain ("Miller") Charge - - 9.0 Veg = -10V (see figure 6) ©
tam) Turn-On Delay Time - 11 - I/co = -15V
tr Rise Time - 17 - ns ID = -1.8A
tdmm Turn-Off Delay Time - 25 - Rs = 6.09
tf Fall Time - 18 - RD = 8.29 ©
Css Input Capacitance - 440 - Veg = 0V
Coss Output Capacitan ce - 200 - pF Ihys = -25V
Css Reverse Transfer Capacitance - 93 - f = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current (Body Diode - - -2.5 A
ISM Pulsed Source Current (Body Diode) - - -29
VSD Body Diode Forward Voltage - - -1.0 V Tu = 25°C. ls = -1.8A, Vss = 0V
trr Reverse Recovery Time (Body Diode) - 53 80 ns Tu = 25''C, I; = -1.8A
er Reverse Recovery Charge - 66 99 nC di/dt = 100/Vps ©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
If (av) Max. Average Forward Current 2.8 A 50% Duty Cycle. Rectangular Wave, Tc = 25''C
1.8 50% Duty Cycle. Rectangular Wave, To = 70°C
ISM Max. peak one cycle Non-repetitive 200 5ps sine or 3ps Rect. pulse FdloMng any rated
Surge current 20 A 10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
me Max. Forward voltage drop 0.57 If = 3.0, T] = 25°C
0.77 V If=6.0, T] =25°C
0.52 If = 3.0, I] = 125°C
0.79 |f=6.0.Tj=125°C
Irm Max. Reverse Leakage current 0.30 mA Vr = 30V T] = 25°C
37 T] = 125°C
Ct Max. Junction Capacitance 310 pF Vr = 5th: ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 4900 V/ps Rated Vr
(HEXFET IS the reg TM for Internationa‘ RectmerPower MOSFET'S )
2

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