IRF7319TR ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1606AIRF7319PRELIMINARY®HEXFET Power MOSFETl Generation V TechnologyN-CHA NNE L M O S F E TN ..
IRF7319TRPBF ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
IRF7321D2 ,-30V FETKYapplications.SO-8The SO-8 has been modified through a customizedleadframe for enhanced thermal char ..
IRF7321D2TR ,-30V FETKYApplications A K P-Channel HEXFET®3 6R = 0.062ΩS D DS(on) Low V Schottky RectifierF45G D Gener ..
IRF7321D2TR ,-30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7321D2TRPBF ,-30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
ISD4002-120ED , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
ISD4002-120P , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
ISD4002-120X , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
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ISD4002-180S , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
IRF7319-IRF7319TR
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
PD - 9.1606A
International
TOR, Rectifier PRELIMINARY IRF731 9
HEXFET® Power MOSFET
0 Generation V Technology -
o Ultra Low On-Resistance MEEHANNELMOSFEJI D1 N-Ch P-Ch
o Dual N and P Channel MOSFET Gll ll 2 7 " D1
0 Surface Mount VDss 30V -30V
o FullyAvalanche Rated 32'“ 5 " D2
G LIE' _ 51E 02
'"0HANNE_LMOSFET RDS(on)0.029§2 0.0580
Description Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, SO-8
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, orwave soldering
techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
N-Channel P-Channel
Drain-Source Voltage V93 30 -30 V
Gate-Source Voltage VGS 1 20
. . TA=25°C 6.5 -4.9
Contn o s Dra n C rrentS
I u u I u TA-- 70°C '0 5.2 -3.9 A
Pulsed Drain Current IBM 30 -30
Continuous Source Current (Diode Conduction) ls 2.5 -2.5
. . . . TA-- 25°C 2.0
Maximum Power Dissipation s TA-- 70°C PD 1.3 W
Single Pulse Avalanche Energy EAS 82 140 mJ
Avalanche Current IAR 4.0 -2.8 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt © dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range TU,TSTG -55 to + 150 "C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient s RNA 62.5 "C/W
9/15/97
|RF7319 International
TOR Rectifier
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage g'g: 2% - - V x93 i tj, I'D 'glt,
- - - - GS - , D - -
. N- h - . 22 - R f 2 cr I = 1 A
AV
N-Ch - 0.023 0.029 VGs = 10V, ID = 5.8A (ri)
. . . - 0.032 0.046 VGS = 4.5V, ID = 4.7A (ii)
R Static Drain-to-Source On-Resistance
DS(ON) P-Ch - 0.042 0.058 Q Vas = -10V, ID = -4.9A co
- 0.076 0.098 VGs = -4.5V, ID = -3.6A ©
VGSgit Forward Transconductance 'll-ir: - 71.47 - s te, i 115;} l =-5f€A® ©
- - . - DS - - , D - - .
N-Ch - - 1.0 Ws = 24V, VGS = 0V
loss Drain-to-Source Leakage Current :"g: - - $50 pA x03 f il))), GS , 80/ T - 5 5° C
- - - DS - , GS - , J -
P-Ch - - -25 Ws = -24V, VGS = 0V, To = 55''C
less Gate-to-Source Forward Leakage N-P - - 1100 nA VGS = EOV
N- h - 22
A, Total Gate Charge P-gh - 23 :3 N-Channel
N-Ch - 2 6 3 9 ID = 5.8A, VDS =15V, VGS =1OV
Qgs Gate-to-Source Charge P Ch :i.is 5'7 nC ©
. . Lic/ I ii.T, "f/i, P-Channel
' Gate-to-Drain ("Miller") Charge P-Ch - 5'9 8-9 ID = MSA, VDS = -15V, VGS = -1 0V
. N- h - .1 12
tdwn) Turn-On Delay Time P-CCIh - i 3 19 N-Channel
. . N-Ch - 8 9 13 VDD = 15V, ID = 1.0A, Rs = 6.00,
tr Rise Time P-Ch - 1-3 20 RD = 159
. N- h - 2 ns (9
tdom Turn-Off Delay Time P-gh - 33 g P-Channel
VDD = -15V, ID = -1.0A, RG = 6.09,
. N-Ch - 17 26 -
tf Fall Time P-Ch - 32 48 RD - 15:2
. N-Ch - 650 - N-Channel
Ciss nputCapacitance P-Ch - 710 - Vos = OV, Vos = 25V, f = 1.0MHz
Cass OutputCapacitance SE: I 3:3 I pF P-Channel
Crss Reverse TransferCapacitance SE: - 1:3 - VGS = OV, I/rss = -25V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
. . N-Ch - - 2.5
ls Continuous Source Current (Body Diode) P-Ch - - -2. 5 A
. N-Ch - - 30
ISM Pulsed Source Current (Body Diode) C) P-Ch - - -30
. N-Ch - 0.78 1.0 V T: = 25°C, Is = 1.7A, VGs = 0V ©
VSD Diode Forward Voltage P-Ch - -0.78 -1.0 TJ = 25''C, ls = -1.7A, sz = 0v (3
t R R Ti N-Ch - 45 68 ns N-Channel
rr everse ecovery Ime P-Ch - 44 66 TJ = 25°C, IF =1.7A, di/dt = 100A/ps
N-Ch - 58 87 P-Channel ©
er Reverse Recovery Charge P-Ch - 42 63 nC To = 25''C, IF = -1.7A, di/dt = 100A/ps
Notes:
co Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle S 2%.
max. junction temperature. ( See fig. 22 )
© N-Channel ISD f 4.0A, di/dt S 74A/ps, VDD f V(BR)DSSa Tu S 150°C © Surface mounted on FR-4 board, t S 10sec.
P-Channel ISD f -2.8A, di/dt S 150A/ps, VDD f V(BR)DSS, Tu S 150°C
© N-Channel Starting Tu = 25°C, L = 10mH Rs = 259, IAS = 4.0A. (See Figure 12)
P-Channel Starting Tu = 25°C, L = 35mH Rs = 259, MS = -2.8A.
