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IRF7316-IRF7316TR
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
PD - 9.1505A
International
TOR, Rectifier PRELIMINARY IRF73'l 6
HEXFET® Power MOSFET
o GenerationVTechnology -
o Ultra Low On-Resistance Sl EL 83: D1
o Dual P-Channel MOSFET G1 I H 2 (sill I D1 VDSS = -30V
0 Surface Mount 3 - (i
o Fully Avalanche Rated S2 [Clie-ll',]] D2
G2 LLL 54L D2 RDS(on) = 0.0589
Top View
Description
Fifth Generation HEXFETs from International Rectiher
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of 80-8
powerapplications. Withthese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( TA = 25''C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS * 20
. . T =25°C -4.9
Contn o s Dra n C rrentS A
I u u I u TA--- 70°C lo -3.9 A
Pulsed Drain Current IBM -30
Continuous Source Current (Diode Conduction) ls -2.5
. . . . TA = 25°C 2.0
Maximum Power Dissipation s TA = 70°C Po 1.3 W
Single Pulse Avalanche Energy EAs 140 mJ
Avalanche Current IAR -2.8 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt © dv/dt -5.0 V/ ns
Junction and Storage Temperature Range TJyTSTG -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient]) Rua 62.5 °CNV
8/25/97
IRF7316 International
TOR Rectifier
Electrical Characteristics @ T., = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGs = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.022 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - 0.042 0.058 Q VGS = -10V, ID = -4.9A ©
- 0.076 0.098 Ves = -4.5V, ID = -3.6A co
VGS(th) Gate Threshold Voltage -1.0 - - V VDs = VGs, ID = -250pA
gfs Forward Transconductance - 7.7 - S Ws = -15V, ID = -4.9A
bss Drain-to-Source Leakage Current - - -1.0 pA Ws i -24V, I/ss i 0V - o
- - -25 VDs - -24V, VGS - 0V, To - 55 C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = -20V
Gate-to-Source Reverse Leakage - - -100 VGs = 20V
q, Total Gate Charge - 23 34 ID = -4.9A
Q95 Gate-to-Source Charge - 3.8 5.7 nC Ws = -15V
di Gate-to-Drain ("Miller") Charge - 5.9 8.9 VGS = -10V, See Fig. 10 (4)
td(on) Turn-On Delay Time - 13 19 VDD = -151/
tr Rise Time - 13 20 ns ID = -1.0A
tum) Turn-Off Delay Time - 34 51 RG = 6.09
tf FaIITime - 32 48 RD = 159 (il)
Ciss Input Capacitance - 710 - VGs = 0V
Coss Output Capacitance - 380 - pF Ws = -25V
Crss Reverse Transfer Capacitance - 180 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 showing the H
ISM Pulsed Source Current A integral reverse G {131
(Body Diode) O) - - -30 p-n junction diode. s
VSD Diode Forward Voltage - -0.78 -1.0 V Tu = 25°C, ls = -1.7A, VGS = 0V ©
trr Reverse Recovery Time - 44 66 ns Tu = 25°C, IF = -1.7A
Qrr Reverse RecoveryCharge - 42 63 nC di/dt = 100A/ps ©
Notes:
co Repetltive rating; pulse width limited by © [SD S -2.8A, di/dt S 150A/ps, V00 f V(BR)DSS,
max. junction temperature. ( See fig. 11 ) Trs 150°C
© Starting Tu = 25°C, L = 35mH © Pulse width 3 300ps; duty cycle 3 2%.
Rs = 259, IAS = -2.8A.
6) Surface mounted on FR-4 board, t s 10sec.
