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IRF7314Q
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
PD -93945A
International
TOR Rectifier IRF7314Q
HEXFET© Power MOSFET
Typieal Applicetions Voss RDS(on) max ID
q Inti-lock. Braking Systems (ABS) -20V 0.058@Vss = -4.5V -5.2 A
: Eilfgggn'c Fuel Injection 0.098@Vss=-2.7V -4.42A
Benefits
. Advanced Process Technology
q Dual P-Channel MOSFET s1mn1- SEW
. Ultra Low On-Resistance 2 l 7
. 175°C Operating Temperature G1 DI LIL] D1
. Repetitive Avalanche Allowed up to Tjmax S2 BIL _ 6313 D2
. Automotive [0101] Qualified Gm: ‘1‘ 53m
Top View
Description
SpeciMally designed for Automotive applications, these HEXFET © Power MOSFET's in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine to make this design an extremely efhcient and reliable device
for use in Automotive applications and a wide variety of other applications.
The 175°C rating forthe SO-8 package provides improved thermal performance with increased safe operating area and dual
MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -5.2
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -4.3 A
IDM Pulsed Drain CurrentC) -43
Po @TA = 25°C Maximum Power Dissipation© 2.4 W
PD @TA = 70°C Maximum Power Dissipation® 1.7 W
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage , 12 V
EAS Single Pulse Avalanche Energy© 610 mJ
IAR Avalanche Current© -5.2 A
EAR Repetitive Avalanche Energy See Fig.14, 15, 16 mJ
T: ' TSTG Junction and Storage Temperature Range -55 to + 175 "C
Thermal Resistance
Parameter Max. Units
RNA Maximum Junction-to-Ambient G) 62.5 "C/W
1
03/20/02
IRF7314Q International
TOR Rectifier
Electrical Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.009 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance - O.049 O.058 Q VGS = -4.5V, ID = -5.2A ©
- 0.082 0.098 Vss = -2.7V, ID = -4.42A C)
VGS(th) Gate Threshold Voltage -0.7 - - V Vos = I/ss, ID = -250pA
gfs Forward Transconductance 6.8 - - S Vos = 10V, ID = -5.2A
loss Drain-to-Source Leakage Current - - -1.0 PA Vos = -16V, VGS = 0V 0
- - -25 Vos = -16V, VGs = 0V, TJ = 150 C
less Gate-to-Source Forward Leakage - - -100 n A N/ss = -12V
Gate-to-Source Reverse Leakage - - 100 VGS = 12V
% Total Gate Charge - 19 29 ID = -5.2A
Qgs Gate-to-Source Charge - 2.1 3.2 nC Vos = -16V
di Gate-to-Drain ("Miller") Charge - 9.3 14 Vss = -4.5V
Mon) Turn-On Delay Time - 18 - VDD = -10V
t, Rise Time - 26 - ns lo = -1.0A
td(off) Turn-Off Delay Time - 41 - Rs = 6.09
tr Fall Time - 38 - VGs = -4.5V C)
Ciss Input Capacitance - 913 - VGS = 0V
CDSS Output Capacitance - 512 - pF V93 = -15V
Crss Reverse Transfer Capacitance - 260 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -3.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -43 p-n junction diode. s
Vso Diode Forward Voltage - - -1.0 V Tu = 25°C, Is = -3.0A, l/cs = 0V ©
trr Reverse Recovery Time - 44 66 ns Tu = 25°C, IF = -3.0A
G, Reverse Recovery Charge - 54 81 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by © Surface mounted on FR-4 board, ts 10sec.
max. junction temperature. 69 Pulse width s: 300ps; duty cycle f 2%.
© Starting T J = 25°C, L = 45mH
RG = 25O, IAS = -5.2A.
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