Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IRF730FI |
ST|ST Microelectronics |
N/a |
440 |
|
|
IRF730PBF ,400V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD-9.308K
IRF730
Intematiqhal
TOR Rectifier
HEXFETO Power MOSFET
. Dynamic dv/dt Ratin ..
IRF730S ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD-9.1009
International
Rectifier IRF73OS
HEXFETO Power MOSFET
Surface Mount
Available ..
IRF730STRL ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF730STRR ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF7311 ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 91435CIRF7311®HEXFET Power MOSFETl Generation V Technology18l Ultra Low On-ResistanceS1 D1V = ..
ISD2532S , SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 32-, 40-, 48-, AND 64-SECOND DURATION
ISD2540S , SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 32-, 40-, 48-, AND 64-SECOND DURATION
ISD2560G , Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations