IRF7309TR ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multiple devices can be used in anSO-8application with dram ..
IRF7309TR ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multiple devices can be used in anSO-8application with dram ..
IRF7309TRPBF ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packageInternational
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o GenerationVTechnology
0 Ultra LowOn-Resi ..
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IRF7309-IRF7309PBF-IRF7309TR
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Intetpatipoal
IOR Rectifier PRELIMINARY
PD - 9.1243B
IRF7309
HEXFET® Power MOSFET
0 Generation V Technology
q Ultra Low On-Resistance N-CHANNELhM3SFET
1 a N-Ch P-Ch
. Dual N and P Channel Mosfet 5131* l TD‘
. Surface Mount Gl :112 7:: DI v 30V 30V
. . DSS -
o /Yailab.le In Tape , Reel S2 'nr'- 63: D2
. Dynamic dv/dt Rating 4 m 5
. . G2 |_LL JL D2
. Fast Switching P-CHANNEL MOSFET RDS(on) 0.0509 0.109
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an SO-8
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
N-Channel P-Channel
ID @ TA = 25°C 10 Sec. Pulse Drain Current, Ves @ 10V 4.7 -3.5 A
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.0 -3.0 A
In @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.2 -2.4 A
IDM Pulsed Drain Current (D 16 -12 A
Po @TA = 25°C Power Dissipation (PCB Mount)" 1.4 W
Linear Derating Factor (PCB Mount ** 0.011 W/°C
VGs Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery dv/dt co 6.9 -6.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Min. Typ. Max. Units
RQJA Junction-to/mb. (PCB Mount, steady state)" - - 90 "C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF7309 TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. - - N-Ch 30 - - VGs = 0V, ID = 250pA
V(BR)DSS Drain to Source Breakdown Voltage P-Ch -30 - - v VGS = 0V, '0 = -250pA
. N-Ch - 0.032 - 0 Reference to 25°C, b = 1mA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient P-Ch - 0.037 - V/ C Reference to 25'C, b = -lmA
N Ch - - 0.050 VGS = 10V, ID = 2.4A (3)
. . - _ - . - - - 0.080 VGS = 4.5V, ID = 2.0A (3)
RD$(ON) Static Drain to Source On Resistance P-Ch - - 0.10 Q VGS = -1OV, ID = -1.8A (D
- - 0.16 VGs = -VN, ID = -1.5A (E)
N-Ch 1.0 - - Vos = Veg, ID = 250pA
VGS(th) Gate Threshold Voltage P-Ch -1 .0 - - v VDS = VGs, b = -250PA
N-Ch 5.2 - - Ws = 15V, b = 2.4A (3)
gts Forward Transconductance P-Ch 2.5 - - s Ws = -24V, ID = -1.8A ©
N-Ch - - 1.0 Ws = 24V, VGS = 0V
. - - P-Ch - - -1.0 Vos = -24V, I/ss = 0V
loss Drain to Source Leakage Current N-Ch - - 25 pA VDS = 24V, VGS = OV, Tu = 125''C
P-Ch - - -25 Vros = -24V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage N-P - - 1100 Veg = * 20V
Qg Total Gate Charge :2: I I li N-Channel
N-Ch - - 2 9 ID = 2.6A, Vos = 16V, VGS = 4.5V
Qgs Gate-to-Source Charge . nC G)
P-Ch - - 2.9
. . N-Ch - - 7 9 P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - - i/i; b = -2.2A, VDs = -16V, VGS = -4.5V
tdmn) Turn-On Delay Time rig: I 6118 I N-Channel
VDD = 10V, ID = 2.6A, Rs = 6.00,
t Rise Time N-Ch - 21 - R = 3 89
r P-Ch - 17 - D .
. N-Ch - 22 - ns 3
tam) Turn-Off Delay Time P-Ch - 25 P-Channel
. N-Ch - 7 7 - VDD = -10V, b = -2dA, Rs = 6.09,
t, FallTime P-Ch - 18 - RD = 459
L9 Internal Drain Inductace N-P - 4.0 - H Between lead tip
Ls Internal Source Inductance N-P - 6.0 - n and center of die contact
Ciss Input Capacitance 2g: - jig - N-Channel
N'Ch - 180 - l/GS = 0v, Vos = 15V, f =1.0MHz
Coss Output Capacitance - - - pF (D
P-Ch - 200 -
N Ch 72 P-Channel
Crss Reverse Transfer Capacitance P:Ch I 93 I Ves = 0V, VDs = -15V, I = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units Conditions
. . N-Ch - - 1.3
Is Continuous Source Current (Body Diode) P-Ch - - -l .8 A
N-Ch - - 16
ISM Pulsed Source Current (Body Diode)T P-Ch - - -12
N-Ch - - 1.0 To = 25°C ls =1.8A,Ws = 0V 3)
VSD Diode Forward Voltage P-Ch - - -1.0 T., = 25'C, Is = -1.8A, VGS = 0V 3
t R R Ti N-Ch - 47 71 ns N-Channel
rr everse eCovery Ime P-Ch - 53 80 T J = 25°C. IF = 2.6A, di/dt = 100Alus
N-Ch - 56 84 nC P-Channel I
Qrr Reverse Recovery Charge P-Ch - 66 99 T J = 25°C, IF = -2.2A, di/dt = 100Alps
ton Forward Tum-On Time N-P Intrinsic turn-on ime is neglegible (turn-on is dominated by ls+LD)
C) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
© N-Channel Iso f 2.4A, di/dt f 73A/ps, VDD S V(BR)DSSY To f 150°C
P-Channel ISD S -1.8A, di/dt S 90A/ps, Vroro S V(BR)ross, To S 150°C
© Pulse width S 300ps; duty cycle 3 2%.
